Ultra Clean Processing of Semiconductor Surfaces XV: (Volume 314 Solid State Phenomena)

This proceedings volume describes the recent progress in the field of ultra-clean surfaces and surface cleaning and preparation for the production of micro- and nanoelectronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography with an aspect ratio of lateral dimension/vertical dimension on the order of 1/10. The goal of the processes is to obtain nano precise etching and cleaning, resulting in ultra-clean surfaces with very few residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Table of Contents:
Preface Chapter 1: Contamination and Contamination Control Surface Cleaning Challenges for Organic Light Emitting Diodes Characterization and Removal of Metallic Contamination in H2O and H2O2 Using Single Particle Inductively Coupled Plasma Mass Spectrometry Direct Analysis of Ultra Trace Metallic Particles in NH3 and HCl Gases by Gas Exchange Device (GED)-ICP-MS Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol Cl-Containing Microplastics from the Environment Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow Chapter 2: FEOL: Surface Chemistry and Etching of Group IV Semiconductors Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe Wet Chemical Cleaning of Organosilane Monolayers Reaction Kinetics of Poly-Si Etching in TMAH Solution Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions Si1-XGeX Selective Etchant for Gate-All-Around Transistors Chapter 3: FEOL: Surface Chemistry and Etching of III-V Compound Semiconductors GaN MOS Structures with Low Interface Trap Density Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions Characterization of Wet Chemical Atomic Layer Etching of InGaAs Chapter 4: FEOL: Etch Dielectric Films and Removal of Masking Films Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid Kinetic Study on the Si3N4 Etching in Superheated Water Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System Chapter 5: Wet Processing in Narrow Spaces and Pattern Collapse Polydimethylsiloxane Micro-Channels Application for the Study of Dynamic Wetting of Nano-Etched Silicon Surfaces Based on Acoustic Characterization Method Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces Formulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+) Mixtures for Cleaning High-Aspect Ratio Contacts in 3D NAND New Test Structure Development for Pattern Collapse Evaluations Breakthrough of Sublimation Drying by Liquid Phase Deposition Chapter 6: Fundamentals of Megasonic Agitation Estimation of the Generation Rate of H· Radicals in a Megasonic Field Using an Electrochemical Technique Visualization of Acoustic Waves and Cavitation in Ultrasonic Water Flow Simulation of Rayleigh Bubble Growth near a No-Slip Rigid Wall Effect of Surfactant in Gas Dissolved Cleaning Solutions on Acoustic Bubble Dynamics Interaction between Free-Surface Oscillation and Bubble Translation in a Megasonic Cleaning Bath Chapter 7: Particle Removal Study on Uniform Deposition on 300 mm Silicon Wafer with Sub-100 nm Sized Particles for Cleaning Application Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O3 and HF Particle Removal in Ultrasonic Water Flow Cleaning Role of Cavitation Bubbles as Cleaning Agents Scalable Particle Removal for sub-5 nm Nodes The Effect of Thermal Aging on Nano-Particle Removal Chapter 8: Post-CMP Cleaning Contact Vs. Non-Contact Cleaning: Correlating Interfacial Reaction Mechanisms to Processing Methodologies for Enhanced FEOL/BEOL Post-CMP Cleaning Effect of Viscosity on Ceria Abrasive Removal in the Buffing CMP Process Nodule Deformation of PVA Roller Brushes on a Rotating Plate: Optimum Cleaning for Nanosized Particles due to Liquid Absorption and Desorption of Sponge Deformation Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process Tribological Characterization of Anionic Supramolecular Assemblies in Post-STI-CMP Cleaning Solution Using a Novel Post-CMP PVA Brush Scrubber Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning Chapter 9: BEOL Cleaning Removal of Post Etch Residue on BEOL Low-K with Nanolift Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers Selective Nickel Platinum Removal without Titanium Nitride Metal Gate Corrosion Roughness and Uniformity Control during Wet Etching of Molybdenum Effect of Surface Chemistry on Ruthenium Wet Etching Selective Ru or Co Etch for 3nm Applications Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging