Ultra Clean Processing of Semiconductor Surfaces XIV: (Volume 282 Solid State Phenomena)

The 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018, Leuven, Belgium, September 3-5, 2018) was organized by IMEC and the scope of this symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacturing. This collection will be interesting and useful for experts in the field of microelectronics.

Table of Contents:
Preface Chapter 1: Keynote Paper Industry Context for Semiconductor Wet Etch and Surface Preparation Chapter 2: Surface Cleaning and Surface Functionalization Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography Organic Material Removal by Thermally Activated Ozone Gas Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization Chapter 3: Surface Preparation of III-V Semiconductors Toward the Surface Preparation of InGaAs for the Future CMOS Integration Effect of WET treatment on Group III-V Compound Semiconductor Surface Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent Chapter 4: Mechanical Particle Removal Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning Damage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology An Observation Method of Real Contact Area during PVA Brush Scrubbing Electrostatic Discharge Control and Visualization in Spray Nozzle Chapter 5: Si and Ge Etching Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology Chapter 6: Selective SixGey Etching for Nanowire Release Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs SiGe vs. Si Selective Wet Etching for Si Gate-all-Around A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks Chapter 7: Gate-all-Around Gate Stack Processing Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films Chapter 8: Non-Semiconductor Film Etching Wet Etchants Penetration through Photoresist during Wet Patterning Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid? Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach Chapter 9: Wetting Drying and Pattern Collapse Drying Stability and Critical Height of Repeating Line/Space Structures Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers Factors Influencing Drying Induced Pattern Collapse 300 mm Wafer Development for Pattern Collapse Evaluations Chapter 10: Interconnects AlCu Pitting Prevention in Post Etch Cleaning Investigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray Tool Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF Atomic Layer Deposition of TiN below 600 K Using N2H4 Process Parameter Control for BEOL TiN Hard Mask Etch-Back BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node Optimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line Process Corrosion of Co in BEOL interconnects in dilute HF solution Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications Chapter 11: Wet Processing for Photovoltaic Devices Impact of Controlled Ni Contamination on Silicon Solar Wafer Material Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells Chapter 12: Contamination: Control and Metrology Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement Advanced Data Analysis Strategies for Understanding Particle Contamination in Chemical Distribution Systems Determination of HCl Transport Coefficients in Real FOUP Polymers for HCl Cross-Contamination Assessment from FOUP to Wafer Yield Enhancement due to Addition of Bevel Cleans at Middle of Line(MOL) Zone