Ultra Clean Processing of Semiconductor Surfaces X: (Volume 187 Solid State Phenomena)

The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992. The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.

Table of Contents:
Preface, Committees and Sponsors Keynote Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap Chapter 1: FEOL Surface Chemistry, Etching and Passivation Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface Web Adds Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers Cleaning and Surface Preparation for SiGe and Ge Channel Device S-Passivation of the Ge Gate Stack Using (NH4)2S Wet Chemical Cleaning of InP and InGaAs Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique Effect of Wet Cleanings on GST Surface: XPS Characterization Study of the Etching Mechanism of Heavily Doped Si in HF Study on Al2O3 Film in Anhydrous HF Vapor Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme Chapter 2: FEOL: Cleaning- and Drying-Induced Defects: Charging, Collapse of Fragile High Aspect Ratio Structures Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process Surface Charging Induced Gate Oxide Degradation Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity Effect of Drying Liquid on Stiction of High Aspect Ratio Structures Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System Chapter 3: FEOL: Photo Resist Removal Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray High Temperature SPM Process Study for Stripping of Implanted Photoresist Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip Applicable Solvent Photoresist Strip Process for High-K/Metal Gate Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas Chapter 4: Mechanical Cleaning Forces: Metrology Effects of Interfacial Strength and Dimension of Structures on Physical Cleaning Window The Influence of Liquid Media on the Fracture Strength of Polysilicon Nanostructures Comparisons of Various Physical Cleaning Chapter 5: Chemical Mechanical Cleaning: Liquid Aerosol Cleaning Effects of Target Compliance on a High-Speed Droplet Impact Order Estimation of Physical Processes in Dynamics of Steam-Water Mixed Spray Cleaning Technique Thermomechanical Resist Removal-Cleaning System Using Cryogenic Micro-Slush Jet Uniformity of Particle Removal by Aerosol Spray Development of a Novel Advanced Spray Technology Based on Investigation of Droplet Energy and Pattern Damage Chapter 6: Chemical Mechanical Cleaning: Megasonic Cleaning Comparison of Gold Particle Removal from Fused Silica and Thermal Oxide Surfaces in Dilute Ammonium Hydroxide Solutions The Influence of the Angle of Incidence in Megasonic Cleaning Simultaneous Removal of Particles from Front and Back Sides by a Single Wafer Backside Megasonic System The Importance of Cavitation Hysteresis in Megasonic Cleaning Control of Sonoluminescence in Carbon Dioxide Containing Di Water at near Neutral pH Conditions Development of a Megasonic System for Cleaning Flat Panel Display Stroboscopic Schlieren Study of Bubble Formation during Megasonic Agitation Chapter 7: Back-End-of-Line Cleaning Low-k Integration Using Metallic Hard Masks Characterization of Low-k Dielectric Etch Residue on the Sidewall by Chemical Force Microscope Optimized Wetting Behavior of Water-Based Cleaning Solutions for Plasma Etch Residue Removal by Application of Surfactants Modification of Post-Etch Residues by UV for Wet Removal "Damage Free" Cleaning for Advanced BEOL Interconnections A Descum Review for Cleaning Surfaces in Polymer Embedded Process Flows Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications ESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC Applications Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide) Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies Wet Clean Induce Pattern Collapse Mechanism Study Chapter 8: Cleaning for 3D Applications Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning Cleaning Requirement in the Thinning Module for 3D-Stacked IC (3D-SIC) Integration High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications Chapter 9: Contamination Control: Metallic and Organic Contamination Indirect Ultra-Pure Water Metals Analysis by Extended Ion Exchange on a Silica Surface Production of High Purity Functional Water at Point-of-Use for Advanced Mask Cleaning Processes Gettering Behavior of Transition Metals in Low Energy, High Dose Ion Implanted Silicon Yield Impact of Backside Metal-Ion Contamination Reliable Quantification of Inorganic Contamination by TXRF Reference Samples for Ultra Trace Analysis of Organic Compounds on Substrate Surfaces Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application Concentration of Three Organic Compounds Influencing each other on Silicon Surface Environmentally Benign In-Line Cleaning Solutions for Immersion Lithography Tools Chapter 10: Wet Processing and Cleaning for Silicon Photo-Voltaic Applications Photovoltaics: The Renewable Energy Revolution Leading the Semiconductor Industry Ozone Based Chemical Oxide Growth for Crystalline Solar Cell Production Simple Wet-Chemical Cleanings for High-Efficiency Silicon Solar Cell Applications Novel Texture Etch Chemistry for Transparent Conducting Oxides Used in Photovoltaic Cells Advanced Texturization of Mc-Si Solar Cells Surface Contamination of Silicon Wafer after Acidic Texturisation Optimization of Post-Texturization Cleans for Heterojunction Solar Cells HF Last Passivation for High Efficiency a-Si/c-Si Heterojunction Solar Cells Wet-Chemical Preparation of Textured Silicon Solar Cell Substrates: Surface Conditioning and Electronic Interface Properties Two-In-One Texturing and Polishing in One Solution Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3