Ultra Clean Processing of Semiconductor Surfaces XVI: (Volume 346 Solid State Phenomena)

This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits.This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Table of Contents:
Preface Chapter 1: Progress in Semiconductor Technologies Past, Present, and Future of Semiconductor Cleaning Technology Nanosheet-Based Transistor Architectures for Advanced CMOS Scaling: Wet Etch and Gas Phase Etch Challenges in Confined Spaces On Gas-Phase Selective Dry Etching in 3D Inflections Chapter 2: Selective Etching of SiGe Alloy Semiconductors SiGe Selective Etching to Enable Bottom and Middle Dielectric Isolations for Advanced Gate-All-Around FET Architecture Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20 Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing Highly Selective Etching of SiGe to Si for GAAFET Chapter 3: Surface Chemistry of Group IV Semiconductors Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations Chapter 4: Surface Chemistry of Compound Semiconductors Surface Characterization - Gallium Nitride Depth Profiling with LEIS Effect of Post-Etch Wet Cleaning on GaAs Surfaces Chapter 5: Pattern Collapse in Semiconductor Device Manufacturing Pattern Collapse Simulation in CMOS Image Sensors Devices Observation of Capillary Condensation and Pattern Bending Phenomena in Si Nanopillars Using In Situ TEM Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure Modeling of Capillary Pattern Collapse on Sub-5nm Pillars Using Molecular Dynamics Insights into FinFET Structure Collapse: A Reactive Force Field-Based Molecular Dynamics Investigation Chapter 6: Etching of Dielectrics Silicon Nitride Selective Functionalization with Aqueous Cellulose Selective Si3N4 Etching for 3D NAND Integration by Using Low Concentration of H3PO4 Investigation of Oxide Regrowth in the Selective Si3N4 Etching Process for 3D NAND Fabrication by Using Finite Element Modeling Simulation Methods for Uniform Wet Etching in Narrow Trenches and Vias Chapter 7: Assessment and Control of Contaminations in Technological Fluids and Air Application of Hydrosol to Aerosol Based Metrology to Predict Wafer Defects from Process Chemical Contamination Nanoparticle Analyzing Technique Review and Sub-10 nm Nanoparticle Sizing Methods Comparison On-Line Metal Concentration Measurement at an Ultra-Trace Level in DIW by Solid Phase Extraction Method Coupled with ICP-MS Real Time AMC Monitoring with Novel Chemical Ionization Mass Spectrometry at Single-Digit pptv Concentrations Monitoring of Trace Molecular Impurities in Clean-Room Air Investigation of Effects of Sulfuric Acid in Single Wafer Cleaning Process Using Isopropyl Alcohol Chapter 8: Contaminations on Wafer Surfaces Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS Chemical Identification of Sub-20 nm Defects and Sub-Monolayer Residues with Nano IR PiFM Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO2 Fine Edge and Bevel Film Cut Accuracy by a Novel and High Precision Wafer Centering System Chapter 9: Modelling of Wet Etching and Cleaning Processes Fluid Simulation over a Rotating Disk: Momentum and Mass Transfer across the Wafer Boundary Etch Profile Prediction Model Using Convolutional Neural Network ESD Prevention Technology for Two-Fluid Pure Water Spray Cleaning with Controlled Electrostatic Charge Chapter 10: Particle Removal Parametric Studies on Particle Removal and Erosion in Nozzle Injection Megasonic Cleaning Optimal Injection Distance in Ultrasonic Water Flow Cleaning Design of “Soft” Cleaning Processes for Emerging Substrates via Stimuli Responsive Chemistry Evaluation and Optimization of Particle Removal with a Resist Peeling Method Pinpoint Particle Removal for EUV Pellicle Productivity Enhancement Electrostatic-Induced Particle Behavior Simulation Framework in Cleaning Process: Interaction between Solid-Liquid Interfaces Chapter 11: Sustainability Aspects in Wet Processing Sulfuric Acid Reduction in Post-Ash Cleans Reduction of Process Chemicals and Energy Use in Single-Wafer Process Applications Eco-Friendly SPM Alternative Resist Stripping with High-Concentration O3-Water Technology Chapter 12: Materials and Technologies for Interconnects Slurry Activation for Enhanced Surface Redox Reactions in CMP New Quaternary Amines and Solvents for Photoresist Developing and Stripping Applications Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes Wet Cleaning of Ru Semi-Damascene 18 MP Structures A Cleaning Method for Post-Etch Ruthenium Residue Removal Using UV and Liquid Chemical Wet Cleaning/Etching of NiAl Thin Film Plasma Oxidation of Patterned Mo Nanowires for Precise and Uniform Dry Etching Controlled and Uniform Wet Etching of Molybdenum Nanowires Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning