Ultra Clean Processing of Semiconductor Surfaces XIII: (Volume 255 Solid State Phenomena)

This volume contains the proceedings of 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2016, Knokke, Belgium, September 12-14, 2016) (www.ucpss.org) and includes studies on cleaning such as particle removal using acoustic enhancement, removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying issues, control and measuring of contamination . FEOL and BEOL topics cover: chemistry of semiconductor surfaces, cleaning related to new gate stacks, cleaning at the interconnect level, selective wet etching, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning after Chemical-Mechanical-Polishing (CMP).

Table of Contents:
Preface, Committees, Sponsor Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors Wet Selective SiGe Etch to Enable Ge Nanowire Formation Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability Surface Preparation Quality before Epitaxy our Paper's Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper Chapter 2: FEOL: Surface Chemistry Groups III-V Compound Semiconductors Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes Comparison of the Chemical Passivation of GaAs, In0.53Ga0.47As, and InSb with 1-Eicosanethiol Digital Etching of GaAs Materials: Comparison of Oxidation Treatments Chapter 3: FEOL: Etching Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate Metrology for High Selective Silicon Nitride Etch Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF3 and H2O Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL Analysis of Si Wet Etching Effect on Wafer Edge Chapter 4: FEOL: Photoresist Removal, General Cleaning Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing Characterization and Development of High Dose Implanted Resist Stripping Processes Chemical Infiltration through Deep UV Photoresist Efficient Photoresist Residue Removal with 172nm Excimer Radiation Chapter 5: Processes of Wetting and Drying Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study Influence of CO2 Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures Some Critical Issues in Pattern Collapse Prevention and Repair Watermark-Free and Efficient Spray Clean on Hydrophobic Surface with Single-Wafer Technology Extended-Nanofluidic Devices and the Unique Liquid Properties - Invited Paper Chapter 6: Mechanical Fluid Effects, Nanoparticles Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe Toward CO2 Beam Cleaning of 20-nm Particles in Atmospheric Pressure Liquid Cell Platform to Directly Visualize Bottom-Up Assembly and Top-Down Etch Processes inside TEM A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning Post-CMP Cleaners for Tungsten at Advanced Nodes Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool Chapter 7: Interconnect Cleaning Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment Characterization of Etch Residues Generated on Damascene Structures Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal TiN Metal Hardmask Etch Residues Removal with AlN Etch High Throughput Wet Etch Solution for BEOL TiN Removal Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions Oxygen Control for Wet Clean Process on Single Wafer Platform Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth Post CMP Wet Cleaning Influence on Cu Hillocks Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond Chapter 8: 3D Integrated Structures Silica Formation during Etching of Silicon Nitride in Phosphoric Acid Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process Chapter 9: Metrology, Specification and Control of Contamination Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler Specification of Trace Metal Contamination for Image Sensors Metal Removal Efficiency in High Aspect Ratio Structures Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces A Mathematical Model Forecasting HF Adsorption onto Cu-Coated Wafers as a Function of the Airborne Concentration and Moisture Chapter 10: Photovoltaics Oxidation of Si Surfaces: Effect of Ambient Air and Water Treatments on Surface Charge and Interface State Density Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells ‘Just-Clean-Enough’: Optimization of Wet Chemical Cleaning Processes for Crystalline Silicon Solar Cells Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells Chapter 11: Non-Wafer Cleaning, Mask Cleaning Optimization of EUV Reticle Cleaning by Evaluation of Chemistries on Wafer-Based Mimic Test Structures Ultra-Trace Sulfate Ion Removal on Photomasks for Haze Reduction 172 nm Excimer Radiation as a Technology Accelerator for Bio-Electronic Applications Chapter 12: Contamination Сontrol of Wafer Ambient Electrolyzed Water for Efficient Metal Removal Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics Inline FOUP Cleaner - The New Type FOUP Cleaner for the Next Generation