Ultra Clean Processing of Semiconductor Surfaces XI: (Volume 195 Solid State Phenomena)

Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also treat the surface chemistry of silicon and other semiconductors, cleaning related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning following CMP (chemical mechanical polishing).

Table of Contents:
Preface, Committees and Acknowledgements Keynote Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors Chapter 1: Cleaning for FEOL Applications Cleaning Technology for Advanced Devices beyond 20 nm Node Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals Development of a Integrated Dry/Wet Hybrid Cleaning System New Chemical Vapor Delivery Systems for Surface Cleaning Removal of UV Cured Resin Using Hybrid Cleaning Method Chapter 2: Wet Etching Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process Wet Etching Behavior of Poly-Si in TMAH Solution Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent SiO2 Etch Rate Modification by Ion Implantation Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch Chapter 3: Surface Chemistry and Functionalisation Chemical Control of Surfaces: From Fundamental Understanding to Practical Application Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor Clean Process Mechanism of HKMG during N-PMOS Patterning Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers) Evaluation of CD Fluctuation on QC Monitor In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition ALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry Cleaning of III-V Materials: Surface Chemistry Considerations Chapter 4: Cleaning for BEOL and 3D Applications Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features The Risk of Pattern Collapse for Structures in Future Logic Devices Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue Removal Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process Analysis of Oxidized Copper Surface and its Evolution Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography Selective High-Throughput TiN Etching Methods The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition Development of Integrated Wet Cleans for 3D-SIC Technologies Post Chemical Mechanical Polish Cleaning Chemistry for through Silicon via Process Chapter 5: Particles and Megasonic Cleaning Acoustic Bubbles: Control and Interaction with Particles Adhered to a Solid Substrate Single Bubble Cleaning and Vortex Flow Acoustic Cavitation Behavior in Isopropyl Alcohol Added Cleaning Solution Towards an Improved Megasonic Cleaning Process: Influence of Surface Tension on Bubble Activity in Acoustic Fields Influence of Dissolved CO2 on Bubble Activity in Pulsed Acoustic Fields Evaluation of Very Dilute Alkaline Solutions for Wafer Cleaning with Megasonic Irradiation Removal of Fine Particle Using SAPS Technology and Functional Water Non Destructive Nanoparticle Removal from Submicron Structures Using Megasonic Cleaning Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control CO2-Dissolved Water Cleans for 2xnm-Node Silicon Devices in a Single Wafer Megasonic System Direct vs. Indirect Megasonic Tank Cleaning Systems; Uniformity, Cleaning Efficiency and Cost of Ownership Development of a Near-Field Megasonic Cleaning System for Nano-Particle Removal Megasonic Cleaning to Remove Nano-Dimensional Contaminants from Wafer Surfaces: An Analytical Study Frictional Analysis of PVA Brush for Post CMP Cleaning: Effects of Rotation Speed, Compression Distance, and Fluid Viscosity A New Retention Method for Sub-10 nm Liquid Filtration Using Fluorescent CdSe QDs Chapter 6: Wetting and Drying Investigation of the Evaporation and Wetting Mechanism of IPA-DIW Mixtures Effect of the Surface/Water Chemistry on the Creation of Watermarks Influence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning System Wetting Challenges in Cleaning of High Aspect Ratio Nano-Structures Evaluation of High-Speed Linear Air-Knife Based Wafer Dryer Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW Effects of Substrate Temperature on the Leaning of Micropatterns during Rinse-Dry Process Advanced Vacuum Wafer Drying for Thermal Laser Separation Dicing Assessment Results from European Collaborative “SEAL” Project Chapter 7: Metal Contamination Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation Evaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning Process Real-Time Analyses of Metal Contaminations in the ppb-Range X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials Characterization of Surface Metal Contaminations on Fused Quartz Chapter 8: Cleaning and Wet Etching for Silicon Photo-Voltaic Applications Cleaning in Crystalline Si Solar Cell Manufacturing How to Overcome the Effects of Silicon Build-Up during Solar Cell Wet Chemical Processing 'Just Clean Enough': Wet Cleaning for Solar Cell Manufacturing Applications Optimized Wet Processes and PECVD for High-Efficiency Solar Cells Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements Combined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar Cells Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells Surface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-Termination Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells Improved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells