Ultra Clean Processing of Silicon Surfaces VI: (Volume 92 Solid State Phenomena)

The issues addressed by the Fifth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing. This covered sutdies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP). Judging from the large number of papers dealing with wet cleaning processes, it is clear that this is still the dominant technology. Various papers discussed simplified cleaning by the use of chelating additives, and single-wafer wet cleaning - which is expected to replace the more standard multi-step batch-type cleaning systems in various applications in the future. Several contributions dealt with new materials introduced into process research and development: such as Cu, and especially (porous) low-k material, as well as high-k and metal gate stacks. Substantial progress had also been made in understanding the effects of megasonics, and in the area of cleaning following CMP. Last, but not least, an encouraging number of contributions were presented on the relatively new topic of supercritical CO2 cleaning. Altogether, the 76 contributions presented at the symposium are an authoritative assessment of the state-of-the-art of this field.

Table of Contents:
Future Challenges for Cleaning in Advanced Microelectronics Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers Wet Etch Enhancement of HfO2 Films by Implant Processing Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries Introduction of High-k Materials into Wet Processing, Analysis and Behavior Metallic Impurity Contamination from Tungsten Gate Cleaning Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy Complexing Agents Employed in Single Chemistry Cleaning: Stability Studies Using HPLC Stability and Residue Studies of Complexing Agents in SC-1 Bath Single Wafer Immersion Process Incorporating a Novel Megasonics Configuration with an Advanced IPA Vapor Condensation Dry Metallic Contamination Removal Evaluation for Single Wafer Processing Procedure to Evaluate Particle-Substrate Interaction during Immersion in Liquid Surfactant Selection for AM Clean in a Single Wafer Oasis Wet System Investigating Post CMP Cleaning Processes for STI Ceria Slurries Long-Term Effect of Transportation on Particle Concentrations in Various Process Chemicals A New Industrial Etching & Drying Process for MEMS to Prevent Collapse of Microstructures In Situ SymflowTM Etching in an STG® Dryer High Uniformity Wet Processing for Qxide Thinning and Polymer Cleaning Applications Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment A Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF Analysis Relation between Surface Contamination of Metals and Defect Formation in Si during Oxidation of Bulk- and SOI-Wafers Evaluation of Ultratrace Metallic Elements in Poly-SiGe Thin Films Effect of Additives on the Removal Efficiency of Photoresist by Ozone/DI-Water Processes: Experimental Study Organic Contamination: Purge Gas Impact in Plastic Storage Boxes Formation of Time-Dependent Haze on Silicon Wafers Compatibility of Supercritical Co2-Based Stripping with Porous Ultra Low-k Materials and Copper BEOL Post Ash Residue Removal Using DSP* Chemistry in an FSI Batch Spray Tool Backside Cleaning for Copper Removal Evaluation of Organic Contamination on Si Wafers in Fab Environments Selective Wet Etching of High-k Gate Dielectrics Investigation of Particle Removal from Silicon Surfaces by Means of Dry and Steam Laser Cleaning A Comprehensive Model for Cleaning Semiconductor Wafers Effect of Transient pH on Particle Deposition during Immersion Rinsing Influence of Hardware and Chemistry on the Removal of Nano-Particles in a Megasonic Cleaning Tank Influence of Frequency on the Removal Efficiency of Nano-Particles in a Megasonic Spray Cleaning Tool A Theoretical and Experimental Study of Damage-Free BEOL Cleaning with Megasonic Agitation Removal of Small (<100-nm) Particles and Metal Contamination in Single-Wafer Cleaning Tool Relation between Particle Density and Haze on a Wafer: a New Approach to Measuring Nano-Sized Particles TXRF Analysis of Low Z Elements and TXRF-NEXAFS Speciation of Organic Contaminants on Silicon Wafer Surfaces Excited by Monochromatized Undulator Radiation Forced Vapour-Phase Decomposition (FVPD) in Combination with e.g. TXRF - a Method to Determine Contamination in Silicon On-Tool Real-Time Moisture Monitoring Provides Yield and Productivity Benefits Effect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) Surfaces Thermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR Spectroscopy Modelling the Growth of Chemical Oxide for Advanced Surface Preparation Wafer Surface Preparation Requirements for Next-Generation Devices Cleaning of Si Surfaces by Lamp Illumination Defect-Free Si Thinning by In Situ HCI Vapour Etching Advanced Cylindrical Capacitor Formation Using Gas-Phase Selective Etching Gas-Phase HF/Vapor Etching of Thermal Silicon Dioxide Films Electrochemical Impedance Spectroscopic Characterization of Hydrophobic Coatings Deposited onto Pre-Oxidized Silicon Can we Increase the Effiency of Organic Contamination Removal by Ozone/DI-Water Processes by Using Additives? New Residue Removal Method Using Ozonated Water with Phosphoric Acid Ozone-Gas Concentration Measurements for Photoresist Stripping Accelerated Removal of Photoresist for Semiconductor Production by an Increased-Pressure Ozone and Water Vapor Process Novel Photoresist Removal Using Atomic Hydrogen Generated by Heated Catalyzer 'Resist / Wet Etch' Couple for Dual Gate Oxide New Contact Cleaning in HF & N2/H2 Microwave Plasma Cleaning after Contact Etching of Multi-Film Stack and Cobalt Disilicide: An XPS Study Alternative Post-Etch Polymer Removal in a Single-Wafer Platform Ammonium Nitrate Cleaning Process for Post Metal Photo-Resister Removing Post Metal Etch Polymer Removal: A New CF4-Based Dry Plasma Process Sequence Influences of Cleaning Conditions and Elapse after Etch on Via Resistance in Multi-Level Cu Interconnects Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration Resist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson HighlandsTM Chamber Corrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP Cleaning Tribological Characterization of Post-CMP Brush Scrubbbing Defectivity Study of Cu Metallization Process by Dark- and Bright-Field Inspection New Dry Tool after Cleaning of Low-k Dielectrics Supercritical Carbon Dioxide Processing of Porous Methylsilsesquioxane(PMSQ) Low-k Dielectric Films Supercritical Carbon Dioxide Cleaning of Low-k Material Removal of Heavy Organics by Supercritical CO2