Gettering and Defect Engineering in Semiconductor Technology IX

Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. Volume is indexed by Thomson Reuters CPCI-S (WoS). The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Table of Contents:
Silicon Wafer Requirements for ULSI Device Processing Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies Infrared Absorption Analysis of Nitrogen in Czochralski Silicon Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers Optical Properties of Oxygen Agglomerates in Silicon Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects Silicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in Silicon Thermal Donors in Silicon Implanted with Rare Earth Impurities Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon Vibrational Modes of Oxygen Dimers in Germanium Oxygen Precipitation in Silicon Doped with Tin Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching Hydrogen-Related Defects in High-Resistivity Silicon Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon Atomistic Study of Boron Clustering in Silicon Self-Interstitial Kinetics and Transient Phenomena in Si Crystals Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles Incorporation, Diffusion and Agglomeration of Carbon in Silicon Suppression of Boron Transient Enhanced Diffusion by C Trapping Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling Room Temperature Point Defect Migration in Crystalline Si Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon Stress-Induced Redistribution of Point Defects in Silicon Device Structures Characterization of Interstitial-Related Bulk Defects in p- Silicon Substrates by Epitaxial Deposition Monitoring of Defects in Thermal Oxides during Electrical Stress Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions A Study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under Stress Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence? Void Shrinkage during Thermal Oxidation of Silicon Gettering Induced by Helium Implantation: Application to a Device Defects Created by Helium Implantation at Different Temperatures in Silicon Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers Influence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in Silicon Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p+ Epitaxial Wafers Copper-Defect and Copper-Impurity Interactions in Silicon Efficiency of Intrinsic Gettering for Copper in Silicon Nickel Gettering in Silicon: Role of Oxygen Electrical Activity of Dislocations in Si Decorated by Ni Comparison of Nickel and Iron Gettering in Cz Silicon Wafers Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers Defect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted Silicon Gettering Technology Based on Porous Silicon Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing Properties of Silicon Film in a Silicon-on-Glass Structure Structural and Photoluminescence Properties of H+ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries Characterization of SiC Grown on Si(111) by Supersonic C60 Beams Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD Cavities in He-Implanted SiC Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy On the Properties of Divacancies in Si1-xGex Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si1-xGex Alloy Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures? Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses Defects in CdTe Induced by Powerful Laser Radiation Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates Radiation-Stimulated Ordering Effect in CdS Crystals The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers Electroluminescence of Si Quantum Dots in MOS Structures Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing Silicon Nanoclusters in Thermal Oxide Films on Silicon Luminescence from Si Nanocrystals and Er3+ Ions Embedded in Resonant Cavities Temporal Characteristics of the Optical Storage Effect in Si:Er Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins Memory Effects in Single-Electron Nanostructures Nanocrystal MOS with Silicon-Rich Oxide Self-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed α-Si:H Films on Glass Substrates Nucleation of Nanostructures from Surface Defects on Silicon Crystalline Silicon for Solar Cells Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells Oxygen Annealing Behavior in Multicrystalline Silicon Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation Effective Gettering Mechanisms in Solar Multicrystalline Materials Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si A Technique for Delineating Defects in Silicon SEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric Deposition Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers Spatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman Mapping Structure and Stability of Thin Praseodymium Oxide Layers on Si(001) Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon 1D-ACAR Studies of As-Grown Impurity Centers in Silicon Characterization of Interfacial States at Silicon Bicrystals Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current