Gettering and Defect Engineering in Semiconductor Technology XII

Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Table of Contents:
Committees Preface 1. Crystalline Silicon for Solar Cells: Single Crystals, Multi-Crystalline Si, Ribbons, Si Thin Films on Substrates Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature Mechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO Substrates Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications 2. Silicon-Based Materials and Advanced Semiconductor Materials (Strained Si, SOI, SiGe, SiC, Ge) Origination and Properties of Dislocations in Thin Film Nitrides Metal In-Diffusion during Fe and Co-Germanidation of Germanium Investigation of 4H-SiC Layers Implanted by Al Ions Interstitial Carbon-Related Defects in Si1-xGex Alloys Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers Configuration of DV Complexes In Ge: Positron Probing of Ion Cores Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium Co-Germanide Schottky Contacts on Ge Internal Dissolution of Buried Oxide in SOI Wafers Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs Vacancy Clusters in Germanium Formation of Hydrogen-Related Shallow Donors in Ge1-xSix Crystals Implanted with Protons Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer 3. Impurities (Oxygen, Carbon, Nitrogen, Fluorine, Metals) in Si Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon Oxygen Dimers and Related Defects in Plastically Deformed Silicon Enhanced Oxygen Precipitation during the Czochralski Crystal Growth Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si Detection of Nickel in Silicon by Recombination Lifetime Measurements Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping 4. Modeling/Simulation of Defects in Si/Semiconductors The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation Fundamental Interactions of Fe in Silicon: First-Principles Theory First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium First-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ß-SiC Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation A Theoretical Study of Copper Contaminated Dislocations in Silicon Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon Effect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si Crystals: Quantum-Chemical Simulations Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth 5. Defect Engineering in Microelectronics and Photovoltaics Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology Two Paths of Oxide Precipitate Nucleation in Silicon Engineering of Dislocation-Loops for Light Emission from Silicon Diodes A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces Structure of Magnetically Ordered Si:Mn Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers Defect Engineering for SIMOX Processing Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties IR Studies on the Interaction between Thermal and Radiation Defects in Silicon Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu The Role of High Temperature Treatments in Stress Release and Defect Reduction Properties of Si:Cr Annealed under Enhanced Stress Conditions Radiation Enhanced Diffusion of Implanted Palladium in Silicon Evolution of Thermal Donors in Silicon Enhanced by Self-Interstitials Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing 6. Gettering and Passivation Techniques Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures Impact of Extended Defects on the Electrical Properties of Solar Grade Multicrystalline Silicon for Solar Cell Application Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors 7. Defect and Impurity Characterization (Physical and Electrical) HREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge. Nanoscale Imaging of CaCu3Ti4O12 Dielectric Properties: The Role of Surface Defects Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation Regular Dislocation Networks in Si. Part II: Luminescence Mapping of Device Yield Relevant Electrical Si-Wafer Parameters Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis EBIC Investigations of Deformation Induced Defects in Si 8. Si-Based Nanostructures (Nanocrystals, Nanowires, Nanodevices) Growth and Properties of Silicon Nanowires for Low-Dimensional Devices Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation 9. Silicon-Based Heterostructures and Optoelectronics Erbium Doped Materials for a Si-Based Microphotonics Regular Dislocation Networks in Silicon. Part I: Structure Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers Dislocation Photoluminescence in Silicon and Germanium Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors X-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS Structures Electroluminescence from ZnO/n+-Si Heterojunction Characterization of SiO2/Si Interface by Cathodoluminescent Method