Gettering and Defect Engineering in Semiconductor Technology X

Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

Table of Contents:
Smart-Cut Process for Ultrathin SOI Wafers Manufacturing Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression Defect Formation in Heavily As-Doped Cz Si Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation Optimized Parameters for Modeling Oxygen Nucleation in Silicon Oxygen Ion Bombardment for Local Oxide Formation in Si Nitrogen Diffusion and Interaction with Oxygen in Si Structure and Electronic Properties of Nitrogen Defects in Silicon Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics Processing and Characterization of 300 mm Argon-Annealed Wafers Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate Silicon Ribbons for Solar Cells Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length Carbon-Induced Twinning in Multicrystalline Silicon Light-Induced Degradation in Crystalline Silicon Solar Cells Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics The Effect of Grain Orientations on the Efficiency of Multicrystalline Solar Cells Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon Influence of High-Temperature Processes on Multicrystalline Silicon Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD) Extended Defects in Silicon: an Old and New Story Luminescence of Dislocations and Oxide Precipitates in Si Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes Luminescence of Silicon Implanted with Phosphorus Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures Doping Effect of Helium Induced Nanocavities in Silicon LACBED Investigations of High Energy Helium Implanted into 4H-SiC Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon Two Dimensional Interstitial Diffusion in Mesoscopic Structures Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers High Temperature Electron Irradiation Effects in InGaAs Photodiodes Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium Radiation Hardening of Silicon for Detectors by Preliminary Irradiation Computer Modelling of SiO2 Precipitation in Cz-Si Doped with Nitrogen First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces Dislocation-Impurity Interaction in Silicon Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon Dislocation Generation in Device Fabrication Process Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon Electrical and Optical Properties of Dislocations Generated under Pure Conditions Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers? Measurement of Nitrogen Concentration in Cz Silicon Crystals Gold Diffusion as a Tool for Defect Characterization in Si Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy Investigation of Semiconductors by Nanoindentation Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities Gettering Strategies for SOI Wafers Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering Internal Gettering Efficiency in p/p+ and p/p- Silicon Epistructures Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level Atomically Controlled Technology for Future Si-Based Devices Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon Application-Specific Wafer Reclaim Coulomb Blockade in Silicon Nanocrystals Embedded in SiO2 Matrix Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer Surface Tension Variation of Silicon Melts with Nitrogen Addition Prospects for New Wafer Types and Materials in Semiconductor Technology and Factors for their Successful Introduction