Gettering and Defect Engineering in Semiconductor Technology VII

Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Table of Contents:
Preface I. Keynote Address Design: New Material Challenge for Silicon ULSI II. Silicon Materials Silicon Wafer Technology: The Challenges towards the Gigabit Era Hydrogen Annealed Silicon Wafer Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal CZ Crystal Growth Development in Super Silicon Crystal Project III. Gettering Techniques Gettering by Voids in Silicon: A Comparison with other Techniques Gettering in Advanced Low Temperature Processes Metal Gettering by Defective Regions in Carbon-Implanted Silicon Metallic Impurity Gettering in MeV Implanted Si Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis Interaction of Impurities and Dislocations in Silicon before and after External Gettering The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers IV. Oxygen in Silicon Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si Vacancy-Assisted Oxygen Precipitation Phenomena in Si Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers State of Oxygen and Growth Conditions Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV) Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection Initial Stage of Oxygen Precipitation in Silicon Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation V. Erbium in Silicon Erbium in Silicon: Problems and Challenges Thermal Donors in Silicon Doped with Erbium Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons VI. Radiation Effects in Semiconductors Defect Engineering Radiation Tolerant Silicon Detectors Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance An IR Study of the Annealing Behaviour of A-Center in Silicon Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation VII. Dislocations in Silicon Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in Silicon The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations Deformation Interaction of Defects in Crystal: Concept of Evaluation VIII. Defect Engineering Yield Analysis of CMOS Ics The Role of Grown-in Defects in Advanced Silicon Technology Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen Strain and Gettering in Epitaxial Silicon Wafers Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements Defects Produced in Silicon by Reactive Ion Etching Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon IX. Advanced Semiconductor Materials and Devices Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals On the Defect Structures in Te-Doped GaAs Study of Surface Conduction Related Effects in GaAs MESFET's Nitridation Effects in n-CdTe X. Semiconductor Material and Device Diagnostics Formation of Grown-in Defects in CZ-Si Crystals X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model) Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA) Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions