Gettering and Defect Engineering in Semiconductor Technology VI

At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

Table of Contents:
Trends and Challenges for Advanced Silicon Technologies Needs of Low Thermal Budget Processing in SiGe Technology History and Future of Semiconductor Wafer Bonding Building the Electron Superhighway: Back-End Processing and Simulation Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era Expected Limits for Manufacturing Very Large Silicon Wafers Diameter Effects on Grown-In Defects in CZ Crystal Growth Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices Multicrystalline Silicon for Solar Cells Room Temperature UHV Silicon Direct Bonding External Gettering for Multicrystalline Silicon Wafers Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications Gettering of Au in Heat Treated Si/SiGe/Si Structures Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing Interactions between Dopants and End-of-Range Defects in Silicon Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation SiC Buried Layer Formation Induced by Ion Implantation The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments Point Defects in Semiconductors - Then and Now Oxygen Aggregation Phenomena in Silicon New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics Hydrogen Passivation of Double Donors in Silicon Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si New Infrared Bands in Neutron-Irradiated Si Iron Group Impurities in Semiconducting Iron Disilicide Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study Influence of Point Defects on Defect Formation in Si:Er The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation Structural and Electrical Properties of NiSi2 Particles in Silicon Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon A Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their Annealing Surface Damage Induced by Reactive Ion Etching in n- Type Silicon The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices Correlation between Dislocations and Electron Transport Properties in Si/SiGe Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon Investigation of the Dislocation Motion in the Bulk SiGe Crystals Ion Beam Sputter Deposited Si0.8Ge0.2Epilayers: Lattice Defects and Surface Topology GaAIAs Lattice Parameter Dependence on Free Electron Concentration Relation between Structural and Carrier Recombination Properties in As-Rich GaAs Investigation of Microdefects in Multicrystalline Silicon for Photovoltaic Applications Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots Band Structure Engineering in Si-Ge Structures Diffusion Effects and Luminescence in Thin SiGe/Si Layers Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure Critical Points of Strained Si1-yCy Layers on Si(001) Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD Elastic Relaxation of Pseudomorphic Strain in Quantum Dots Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions Twin Formation during Epitaxial Growth of InP on Si Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates Determination of Interface Structure and Bonding by Z-Contrast STEM Tomographic Atom Probe: A New Tool for Nanoscale Characterisation PHOTO-EDSR in Plastically Deformed p-Si Cyclotron Resonance in Heavily Doped Silicon Quantum Wells TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam Epitaxy Measurements of Diffusion Length in Si-SiGe Structures Determination of Subgap-Asorption in μc-Si:H Films by CPM An Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures