Gettering and Defect Engineering in Semiconductor Technology VIII

Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field. Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Table of Contents:
Preface Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond Self-Assembling Si/SiGe Nanostructures for Light Emitters The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics Acoustically Driven Optical Parameters in Ⅱ-Ⅵ Photonic Materials Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures Status, Hopes and Limitations for the Si: Er-based 1.54 μm Emitter Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers Grown-in Defects in High Temperature Annealed Si Wafers Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut' Relaxation of Misfit Induced Strain in Si-Based Heterostructures Materials Quality and Materials Cost - Are they on a Collision Course? Defect Engineering in the Development of Advanced Silicon Crystals and Wafers 200 GHz Potential of Si-Based Devices Silicon Materials Engineering for the Next Millennium Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers Equilibrium Critical Thickness of Strained Buried SiGe Layers Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers Defect Control in Nitrogen Doped Czochralski Silicon Crystals Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells Interaction between Point Defects and Dislocations in SiGe Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices Radiation Defects Formation in Si Oxygen and Peculiarities of its Precipitation in Si The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness Vacancy-Gettering in Silicon: Cavities and Helium-Implantation Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon Iron Gettering on Cavities Produced by Helium Implantation Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon Laser-Stimulated Gettering Processes in CdxHg1-xTe Solid Solutions Gettering Strength Assessment Based on Lifetime Measurements Impurity Gettering Investigation in the Si-SiO2 System Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures Surface Gettering Background Impurities and Defects in GaAs Plates Gettering Processes for the Preparation of Silicon Solar Cell Material Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures Infrared Vibrational Bands Related to Thermal Donors in Germanium New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon The Segregation Behaviour of Oxygen at Dislocations in Silicon About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon The Nature of Precursors for the Thermal Donor Formation in Silicon Photoluminescence of Erbium-Doped Silicon: Temperature Dependence Rare Earth Impurities and Impurity-Related Centers in Silicon Defect Engineering in Si: Ho Light-Emitting Structure Technology Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals Ultrasonic Influence on Dislocation Dynamics in Silicon P-N- Junction Peripheral Current Analysis using Gated Diode Measurements Investigations of Extended Defects after Sulfur Diffusion in GaAs On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs Variations of Silicon Melt Convection in a Crucible with Boron Addition Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators Electron Spin Resonance of the Pb Centers Associated with Oxygen Precipitates in Silicon Crystals Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique Formation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with Zinc Magnetoplastic Effect in Compound Semiconductors Reconstruction of GaAs/AlAs (311) and (100) Interfaces: Raman Study Simulation of Point Defect Diffusion in Semiconductors Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides Reconstruction of Deep Level Defect Distribution from DLTS Measurements in Compensated Semiconductors Identification of Process Induced Defects in Silicon Power Devices Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes Oriented Silicon Films on Glass Substrates for Device Applications Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance Hydrogen Diffusion and Trapping in Microcrystalline Silicon Substrate Material for sub-0.25µm Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion Atomic Structure of Chalcogen-Hydrogen Complexes in Silicon Electric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution Films Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems