Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules
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Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules

Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules


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About the Book

This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.



Table of Contents:
  • Preface
  • Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
  • Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
  • A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
  • Temperature Dependence of the AC-BTI in SiC MOSFETs
  • Reliability Challenges of SiC MOSFETs under Continuous Dual-Bias Stress in EV Applications
  • Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
  • Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors
  • Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations
  • Effects of Dynamic Reverse Bias Stress on the Blocking Capability of SiC MOSFETs
  • Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Processing and Screening
  • Cumulative Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs after Bipolar Gate Switching Stress
  • Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
  • Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
  • Design Space Exploration of SiC Power Module Package via Surrogate Model
  • Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
  • Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output
  • Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
  • Low-Inductance Packaging Design for SiC Power MOSFET Modules


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Product Details
  • ISBN-13: 9783036421339
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 160
  • Weight: 410 gr
  • ISBN-10: 3036421335
  • Publisher Date: 01 Jun 2026
  • Binding: Paperback
  • Language: English
  • Spine Width: 8 mm
  • Width: 170 mm


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Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules
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