Material Characterisation and Devices Processing
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Material Characterisation and Devices Processing

Material Characterisation and Devices Processing


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About the Book

This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.



Table of Contents:
  • Preface
  • Comparison of the Irradiation Temperature Effect of on the Carrier Removal Rates in GaN and SiC
  • Investigation of Mechanical Stress and Warpage in 200 mm Silicon Carbide Wafers: Implications for Production Scalability
  • Challenges in Measuring Thin SiO2 Layers on 4H-SiC via Spectroscopic Ellipsometry
  • A Frequency-EBIC Technique for High Spatial Resolution of the Effective Minority Charge Carrier Lifetime in SiC PN-Junctions
  • Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements
  • Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current
  • A Study on Simplifying the Process of a Single Cycle for Multiple Epitaxy and Implantation Method to Fabricate SiC Super Junction
  • Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate
  • Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices Using Background Doping Modulation (BDM)
  • Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
  • 4H-SiC Diodes to Probe Stark Effect Detection in 7Be Decay Lifetime
  • Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation
  • Effect of Varying N+ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs


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Product Details
  • ISBN-13: 9783036421278
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 100
  • Weight: 320 gr
  • ISBN-10: 3036421270
  • Publisher Date: 10 Jun 2026
  • Binding: Paperback
  • Language: English
  • Spine Width: 5 mm
  • Width: 170 mm


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