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Home > Mechanical engineering and materials > Materials science > Engineering applications of electronic, magnetic, optical materials > Nonvolatile Memory and Selector Devices, 2 Volumes: Technology and Applications
Nonvolatile Memory and Selector Devices, 2 Volumes: Technology and Applications

Nonvolatile Memory and Selector Devices, 2 Volumes: Technology and Applications


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About the Book

An introduction to foundational memory technology

Nonvolatile memory devices have become an ubiquitous component of consumer technology, appearing in products including smartphones, tablets and notebooks, and many more. They enable the high-speed permanent storage and readout of data with high reliability and low energy consumption. The growing incorporation of emerging materials, such as phase-change and two-dimensional materials, promise to further improve these devices and increase their technological reach.

Nonvolatile Memory and Selector Devices offers a hands-on overview of these devices and their applications, with a focus on those employing novel materials. It strongly emphasizes so-called selectors, the nanostructures whose intricate design is the basis for all advanced memory devices. Its emphasis on practical tools makes it a must-have for engineers and researchers alike.

Nonvolatile Memory and Selector Devices readers will also find:

  • Devices with immediate potential for mass-fabrication using existing facilities
  • An up-to-the-minute analysis of current and emerging research
  • Chapters authored by high-profile researchers from academia and industry alike

Nonvolatile Memory and Selector Devices is ideal for all researchers and early-career professionals in research or development, looking to develop an understanding of this critical set of electronic components.



Table of Contents:

Volume 1

Preface xv

Acknowledgment xix

Part I Introduction to Nonvolatile Memory 1

1 Introduction 3
Adnan Mehonic and Fernando Leonel Aguirre

2 3D NAND Flash Memories: Technological Evolution and Prospective Applications 25
David Gianluigi Refaldi, Gerardo Malavena, Christian Monzio Compagnoni, and Alessandro Sottocornola Spinelli

3 Reliability Challenges of NAND Flash Memory in Harsh Environments 53
Biswajit Ray and Mondol Anik Kumar

4 Two-Dimensional Materials for Future Transistors 83
Xudong Zhuang, Jiazheng Chen, Arijit Sarkar, and Tania Roy

Part II Nonvolatile Memory Based on Various Mechanisms 117

5 Phase-Change Memory 119
Anna Lisa Serra and Gabriele Navarro

6 Magnetic Random Access Memory: Past, Present, and Future 149
Hasibur Rahaman, Ramu Maddu, and S.N. Piramanayagam

7 HfO2 in Ferroelectric Devices Key Physics and Critical Challenges 189
Alireza Kashir

8 Programmable Read-Only Memory (PROM) 221
Daphne Chen, E-Ray Hsieh, and Yifu Huang

9 NRAM: A Disruptive Carbon-Nanotube Nonvolatile Resistance-Change Memory 253
David C. Gilmer, Harry Luan, Jo Luo, and Rahul Sen

10 Photonic Nonvolatile Memory Devices 283
Bassem Tossoun

Part III Redox-based Emerging Nonvolatile Memory Devices 313

11 Conductive Bridge Random Access Memory (CBRAM) Devices: Materials, Filament Scaling, and Performance 315
Writam Banerjee

12 Metal–Oxide Resistive Random-Access Memory Technology: A Perspective on the Challenges and Opportunities 355
Bhaswar Chakrabarti, Sourodeep Roy, Shubham R. Pande, and Masud Rana Sk

13 Modeling and HRRAM 389
Philippe Blaise

Volume 2

Preface xv

Acknowledgment xix

14 Two-Dimensional (2D) Materials for Scalable Resistive Memory Devices 413
Fei Hui, Xin Liu, Conghui Zhang, Yuchen Li, Yuan Yu, and Peisong Liu

15 Reliability and Variability Analysis of Resistive Switching Memory Devices 445
Nagarajan Raghavan

16 Productization of ReRAM, from Concept to Market 473
Gabriel Molas, Lucas Reganaz, Bastien Giraud, Yvain Thonnart, Giuseppe Piccolboni, Alessandro Bricalli, Mario Pallo, Louis Hutin, Elisa Vianello, Damien Deleruyelle, and Quentin Rafhay

Part IV Selector Devices, and Characterization Techniques 501

17 Electrical Characterization and Compact Modeling of HfO 2 -Based Complementary Resistive Switching Devices 503
Mercedes Saludes-Tapia, Samuel Poblador, Francesca Campabadal, Jordi Suñé, Mireia Bargalló González, and Enrique Miranda

18 Switching Dynamics of Ag- and Cu-based Diffusive Memristors 531
Solomom Amsalu Chekol and Susanne Hoffmann-Eifert

19 Amorphous Chalcogenide-Based Threshold Switches for Selector and Memory Applications 559
Taras Ravsher, Sergiu Clima, Daniele Garbin, and Robin Degraeve

20 Strategies for the Nanoscale Characterization of Volatile and Nonvolatile Filaments 595
md Ashiqur Rahman Laskar, Srijan Chakrabarti, William A. Hubbard, and Umberto Celano

Part V Applications of Emerging Nonvolatile Memory Devices 625

21 Emerging Devices for Neuromorphic Sensing and Computing 627
Qi liu, Xumeng Zhang, and Chao li

22 Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications 653
Wooseok Choi, Mamidala Saketh Ram, Donato F. Falcone, Tommaso Stecconi, Davide G. F. Lombardo, Antonio La Porta, Folkert Horst, Daniel Jubin, Valeria Bragaglia, and Bert Jan Offrein

23 Accelerating Algorithms Using Emerging Nonvolatile Memory Subsystems for Edge Computing 701
Yimin Wang and Xuanyao Fong

24 Hardware Security Using Emerging Nonvolatile Memories 725
Kunal Kranti Das, Arshid Nisar, Gokulnath Rajendran, Furqan Zahoor, Brajesh Kumar Kaushik, and Anupam Chattopadhyay

25 Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond 757
Mohit Kumar and Hyungtak Seo

26 Adapting Emerging Nonvolatile Memristor Technology for RF Applications 771
Jayakrishnan Purushothama, Yuan Ding, Marc Desmulliez, George Goussetis, Arnaud Vena, Rida Gadhafi, and Etienne Perret

Index 811



About the Author :

Writam Banerjee, PhD, is currently affiliated with the Centre for Semiconductor Design and Technology (CSDT), Indian Institute of Technology Roorkee. He previously served as Principal Engineer in Technology Development for Emerging Nonvolatile Memories at GlobalFoundries, Dresden, Germany, beginning in 2021. Prior to his industry appointment, Dr. Banerjee held several academic positions over more than a decade and has authored over 100 peer-reviewed scientific publications.


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Product Details
  • ISBN-13: 9783527353996
  • Publisher: Wiley-VCH Verlag GmbH
  • Publisher Imprint: Blackwell Verlag GmbH
  • Height: 244 mm
  • No of Pages: 880
  • Returnable: Y
  • Returnable: Y
  • Sub Title: Technology and Applications
  • Width: 170 mm
  • ISBN-10: 3527353992
  • Publisher Date: 01 Jul 2026
  • Binding: Hardback
  • Language: English
  • Returnable: Y
  • Returnable: Y
  • Spine Width: 15 mm
  • Weight: 750 gr


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