An introduction to foundational memory technology
Nonvolatile memory devices have become an ubiquitous component of consumer technology, appearing in products including smartphones, tablets and notebooks, and many more. They enable the high-speed permanent storage and readout of data with high reliability and low energy consumption. The growing incorporation of emerging materials, such as phase-change and two-dimensional materials, promise to further improve these devices and increase their technological reach.
Nonvolatile Memory and Selector Devices offers a hands-on overview of these devices and their applications, with a focus on those employing novel materials. It strongly emphasizes so-called selectors, the nanostructures whose intricate design is the basis for all advanced memory devices. Its emphasis on practical tools makes it a must-have for engineers and researchers alike.
Nonvolatile Memory and Selector Devices readers will also find:
- Devices with immediate potential for mass-fabrication using existing facilities
- An up-to-the-minute analysis of current and emerging research
- Chapters authored by high-profile researchers from academia and industry alike
Nonvolatile Memory and Selector Devices is ideal for all researchers and early-career professionals in research or development, looking to develop an understanding of this critical set of electronic components.
Table of Contents:
Volume 1
Preface xv
Acknowledgment xix
Part I Introduction to Nonvolatile Memory 1
1 Introduction 3
Adnan Mehonic and Fernando Leonel Aguirre
1.1 Static Random Access Memory (SRAM) 5
1.2 Dynamic Random Access Memory (DRAM) 6
1.3 Nonvolatile Memory (NVM) 8
1.4 Performance Requirements 10
1.5 Emerging NVMs 13
1.6 Magnetic RAM (MRAM) 13
1.7 Phase-Change Memory (PCM) 15
1.8 Ferroelectric Random Access Memory (FeRAM) 15
1.9 Resistive Random Access Memory (RRAM) 16
1.10 Comparison Between Different Emerging Nonvolatile Memories 17
2 3DNAND Flash Memories: Technological Evolution and Prospective Applications 25
David Gianluigi Refaldi, Gerardo Malavena, Christian Monzio Compagnoni, and Alessandro Sottocornola Spinelli
2.1 Current 3D NAND Flash Technology 25
2.2 Technology Evolution and Scaling 34
2.3 Challenges and Future Prospects of 3D NAND Flash 38
2.4 Emerging Applications 43
3 Reliability Challenges of NAND Flash Memory in Harsh Environments 53
Biswajit Ray and Mondol Anik Kumar
3.1 Introduction 53
3.2 Fundamentals on 3-D NAND Flash 53
3.3 TID Effects on 3-D NAND Array 57
3.4 Single-Event Effects on 3-D NAND Array 67
3.5 TID Effects Mitigation 68
3.6 TID Effects on the NAND Peripheral Circuitry 73
3.7 Conclusion 76
4 Two-Dimensional Materials for Future Transistors 83
Xudong Zhuang, Jiazheng Chen, Arijit Sarkar, and Tania Roy
4.1 2D Materials for Nanoelectronics 83
4.2 Memtransistor Based on 2D Materials 88
4.3 2D Spintronics 90
4.4 Phototransistors 92
4.5 Synapses for Neuromorphic Computing 96
4.6 Beyond Silicon 100
Part II Nonvolatile Memory Based on Various Mechanisms 117
5 Phase-Change Memory 119
Anna Lisa Serra and Gabriele Navarro
5.1 Phase-Change Materials and Phase-Change Mechanism 119
5.2 Phase-Change Memory Devices 124
5.3 PCM Present Applications 130
5.4 Phase-Change Memory Challenges 133
6 Magnetic Random Access Memory: Past, Present, and Future 149
Hasibur Rahaman, Ramu Maddu, and S.N. Piramanayagam
6.1 Introduction 149
6.2 Memory Architecture 152
6.3 Evolution of Magnetic Memory 153
6.4 MRAMWriting 154
6.5 MRAM Storing 168
6.6 MRAM Reading 173
6.7 Summary and Outlook 176
7 HfO2 in Ferroelectric Devices Key Physics and Critical Challenges 189
Alireza Kashir
7.1 Introduction 189
7.2 Ferroelectric Properties: A Short Overview 190
7.3 Basics of HfO2: Crystal Structure and Electronic and Electrical Properties 193
7.4 Basics of HfO2: Origin of Ferroelectricity 195
7.5 Ferroelectric HfO2 Thin Film: Key Parameters 198
7.6 HfO2-Based Ferroelectric Device: Current Challenges 206
7.7 Summary 211
8 Programmable Read-Only Memory (PROM) 221
Daphne Chen, E-Ray Hsieh, and Yifu Huang
8.1 Introduction 221
8.2 PROM Technology in Industry 231
8.3 Emerging Reprogrammable PROM 239
8.4 Conclusion 247
9 NRAM: A Disruptive Carbon-Nanotube Nonvolatile Resistance-Change Memory 253
David C. Gilmer, Harry Luan, Jo Luo, and Rahul Sen
9.1 Introduction 253
9.2 What Are Carbon Nanotubes (CNT) 253
9.3 From Raw CNT Materials to Semiconductor Grade 255
9.4 CMOS-Compatible NRAM Technology 259
9.5 NRAM Device Operation and Electrical Characteristics 263
9.6 NRAM Switching and Conduction Mechanisms 272
9.7 NRAM-Based Applications 275
9.8 Conclusion and Outlook 277
10 Photonic Nonvolatile Memory Devices 283
Bassem Tossoun
10.1 Introduction 283
10.2 Device Discussion 285
10.3 Summary 309
Part III Redox-based Emerging Nonvolatile Memory Devices 313
11 Conductive Bridge Random Access Memory (CBRAM) Devices: Materials, Filament Scaling, and Performance 315
Writam Banerjee
11.1 Introduction 315
11.2 The Art of Resistive Switching 317
11.3 Fabrication of CBRAM 333
11.4 The Ultimate Scaling 342
11.5 Performance Benchmarking 344
11.6 Summary and Future Scope of Research 345
12 Metal–Oxide Resistive Random-Access Memory Technology: A Perspective on the Challenges and Opportunities 355
Bhaswar Chakrabarti, Sourodeep Roy, Shubham R. Pande, and Masud Rana Sk
12.1 Introduction 356
12.2 Overview of RRAM Technology 358
12.3 Applications of RRAMs 371
12.4 Conclusion 379
13 Modeling and HRRAM 389
Philippe Blaise
13.1 Introduction 389
13.2 Atomistic and TCAD Simulations 391
13.3 Resistive RAM Physics 392
13.4 Metallic Clusters 395
13.5 Oxide Thermochemistry 398
13.6 Hybrid RRAM 405
13.7 Multiscale Strategy 407
13.8 Concluding Remarks 409
References 409
Volume 2
Preface xv
Acknowledgment xix
14 Two-Dimensional (2D) Materials for Scalable Resistive Memory Devices 413
Fei Hui, Xin Liu, Conghui Zhang, Yuchen Li, Yuan Yu, and Peisong Liu
15 Reliability and Variability Analysis of Resistive Switching Memory Devices 445
Nagarajan Raghavan
16 Productization of ReRAM, from Concept to Market 473
Gabriel Molas, Lucas Reganaz, Bastien Giraud, Yvain Thonnart, Giuseppe Piccolboni, Alessandro Bricalli, Mario Pallo, Louis Hutin, Elisa Vianello, Damien Deleruyelle, and Quentin Rafhay
Part IV Selector Devices, and Characterization Techniques 501
17 Electrical Characterization and Compact Modeling of HfO2-Based Complementary Resistive Switching Devices 503
Mercedes Saludes-Tapia, Samuel Poblador, Francesca Campabadal, Jordi Suñé, Mireia Bargalló González, and Enrique Miranda
18 Switching Dynamics of Ag- and Cu-based Diffusive Memristors 531
Solomom Amsalu Chekol and Susanne Hoffmann-Eifert
19 Amorphous Chalcogenide-Based Threshold Switches for Selector and Memory Applications 559
Taras Ravsher, Sergiu Clima, Daniele Garbin, and Robin Degraeve
20 Strategies for the Nanoscale Characterization of Volatile and Nonvolatile Filaments 595
Md Ashiqur Rahman Laskar, Srijan Chakrabarti, William A. Hubbard, and Umberto Celano
Part V Applications of Emerging Nonvolatile Memory Devices 625
21 Emerging Devices for Neuromorphic Sensing and Computing 627
Qi Liu, Xumeng Zhang, and Chao Li
22 Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications 653
Wooseok Choi, Mamidala Saketh Ram, Donato F. Falcone, Tommaso Stecconi, Davide G. F. Lombardo, Antonio La Porta, Folkert Horst, Daniel Jubin, Valeria Bragaglia, and Bert Jan Offrein
23 Accelerating Algorithms Using Emerging Nonvolatile Memory Subsystems for Edge Computing 701
Yimin Wang and Xuanyao Fong
24 Hardware Security Using Emerging Nonvolatile Memories 725
Kunal Kranti Das, Arshid Nisar, Gokulnath Rajendran, Furqan Zahoor, Brajesh Kumar Kaushik, and Anupam Chattopadhyay
25 Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond 757
Mohit Kumar and Hyungtak Seo
26 Adapting Emerging Nonvolatile Memristor Technology for RF Applications 771
Jayakrishnan Purushothama, Yuan Ding, Marc Desmulliez, George Goussetis, Arnaud Vena, Rida Gadhafi, and Etienne Perret
Index 811
About the Author :
Writam Banerjee, PhD, is currently affiliated with the Centre for Semiconductor Design and Technology (CSDT), Indian Institute of Technology Roorkee. He previously served as Principal Engineer in Technology Development for Emerging Nonvolatile Memories at GlobalFoundries, Dresden, Germany, beginning in 2021. Prior to his industry appointment, Dr. Banerjee held several academic positions over more than a decade and has authored over 100 peer-reviewed scientific publications.
