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A Layered Chalcogenide Phase Change Memory Device

A Layered Chalcogenide Phase Change Memory Device


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About the Book

Non-volatile memory (NVM) is the fastest growing sector of the semiconductor market. With sales growing from $26 billion in 2006 to more than $64 billion in 2010, there is a large economic incentive to improve on NVM performance. This has led to aggressive scaling of Flash memory, the dominant NVM technology. There are, however, limitations to the degree that Flash can be scaled, with failure of the technology predicted as early as 2010. As a result, research has accelerated in alternative NVM technologies. Among these, phase-change memory (PCM) shows particular promise given its small cell size, non-destructive read, direct overwrite ability, large sensing margin, and fast speed. Despite these advantages, the requirement for a large (mA-range) programming current remains the major obstacle to mainstream implementation for PCM. To address this issue, we propose a novel layered structure where the phase-change material (Ge2 Sb2 Te5, or GST) is sandwiched between two other layers (called GST-x layers). With the correct choice of material, the GST-x layers improve the thermal isolation of the GST, while reducing the volume of material programmed. This, in turn, lowers the energy and current required to operate the device. After a thorough analysis of GST-x candidates using X-ray Diffraction, X-ray Photoemission Spectroscopy, Thermal Reflectance Thermometry, and electrical measurements, GeTe (GT) was chosen to function as the GST-x film. Single layer GST and multi-layer GT/GST/GT devices were then fabricated and compared. Analysis was conducted using a combination of electrical measurements, transmission electron microscopy and scanning Auger spectroscopy. As a result of this analysis, GT/GST/GT devices showed a modest (24%) reduction in programming current on the first cycle and a significant (99%) reduction on subsequent cycling. Reasons for this and reliability concerns are discussed. Finally, suggestions for further improving the layered structure are presented.


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Product Details
  • ISBN-13: 9781243559210
  • Publisher: Proquest, Umi Dissertation Publishing
  • Publisher Imprint: Proquest, Umi Dissertation Publishing
  • Height: 246 mm
  • Weight: 372 gr
  • ISBN-10: 1243559217
  • Publisher Date: 01 Sep 2011
  • Binding: Paperback
  • Spine Width: 11 mm
  • Width: 189 mm


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A Layered Chalcogenide Phase Change Memory Device
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