CdTe and Related Cd Rich Alloys: Proceedings of Symposium F on New Aspects on the Growth, Characterization and Applications of CdTe and Related Rich Alloys, 1992 E-MRS Spring Confer(v. 36 European Materials Research Aociety Symposia Proceedings S.)

The multi-faceted qualities of CdTe have been illustrated up till now by the diverse applications to which it has given rise, ranging from the first solar cells to photorefractive devices. This volume provides a guide on progress over the last decade in CdTe and related Cd-rich alloys. CdTe portrays numerous versatile features making it an ideal material for photovoltaic conversion. It can present both types of conductivity. CdTe based semimagnetics display exciting properties making the material conducive to basic studies and potential applications. This is also true for heterostructures where the band gap engineering concept opens up a tremendous field of possibilities. Owing to these winning properties there has been a growing interest in CdTe. The articles in this volume review the new techniques incorporating CdTe, such as in epitaxial growth at low temperatures like MBE or MOCVD, as well as the rapid progress in the growth and characterization techniques leading to a better knowledge and control of its properties. The work will provide both a stimulus for future research in this field as well as useful reference material for many years to come.

Table of Contents:
(Abbreviated.) Mechanical properties of CdTe (R. Balasubramanian et al.). Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions (E. Weigel et al.). Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique (P. Capper et al.). Computer simulation of CdTe crystal growth and application (C. Steer et al.). CdTe rotation growth on silicon substrates by metallo-organic chemical vapour deposition (H. Ebe, H. Takigawa). Structural and electronic properties of CdTe-based heterostructures (N. Magnea et al.). Piezoreflectivity investigation of CdTe/ [Cd, Zn] Te heterostructures (J. Calatayud et al.). Structural defects in bulk and epitaxial CdTe (K. Durose et al.). In situ reflectance anisotropy studies of the growth of CdTe and other compounds by MOCVD (V. Sallet et al.). Structural properties of defects in Cd1-xZnxTe (D.M. Hofman et al.). New method for the determination of VCd-concentrations in p-CdTe (H. Zimmermann et al.). Scanning tunneling microscope investigation of the effects of CdTe substrate preparation on molecular beam epitaxially grown n-CdTe layers (M. Ehinger et al.). Complete characterization of epitaxial CdTe on GaAs from the lattice geometrical point of view (P. Mock). Relation between dislocation density, bulk electrical properties and ohmic contacts of CdTe (I. Hahnert et al.). Diffusion of gallium in cadmium telluride (G.W. Blackmore et al.). Effect of interdiffusion on dislocation generation in epitaxial layers on CdTe [Cd, Zn]Te and Cd[Te,Se] substrates (I. Utke et al.). Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells (A. Hamoudi et al.). Native point defects in CdTe and its stability region (M. Wienecke et al.). Overview of CdTe-based semimagnetic semiconductors (J.P. Lascaray). Determination of the iron acceptor level in CdTe (B.K. Meyer et al.). Potentiality of photorefractive CdTe (J.Y. Moisan et al.). Optical, photoelectrical, deep level and photorefractive characterization of CdTe:V (J.P. Zielinger et al.). High quality CdTe and its application to radiation detectors (M. Ohmori et al.). Compensation of trapping losses in CdTe detectors (M. Richter et al.). Picosecond diffraction kinetics of transient gratings in CdTe and CdZnTe (N. Brugel et al.). Author index. Subject index.