Solid State Device Research '92: Proceedings of the 22nd European-Solid State Device Research Conference (ESSDERC '92), Leuven, Belgium, 14-17 September 1992

The contributions in this volume focus on the physics, characterization and processing of solid state devices. Thirty invited papers and well over a hundred contributed papers are presented. They discuss recent developments and future trends in silicon IC technology, compound semiconductor technology, solid state devices, sensors, actuators and displays, modelling, characterization and packaging. The quality of the contributions reflect without any doubt that ESSDERC is the most important European forum for research and development of semiconductor devices and technology. The volume will be of interest to all those wishing to enhance their knowledge in this rapidly developing field.

Table of Contents:
Abbreviated.Sessions: Ia: Plenary Invited Papers. USLI CMOS - The next 10 years (P. Chatterjee). Recent developments in InP-based optoelectronic devices (Y. Suematsu). IIa: CMOS. IIb Modeling of Compound Semiconductor Devices. Simulation of compound semiconductor devices (W. Schoenmaker, R. Vankemmel). IIc: Optoelectronics. IIIa: CMOS. Total quality management (TQM) in solid state research (K. Beasley). IIIb. Large Area Electronics. Physics and modeling of poly Si TFT's (P. Migliorato). IIIc. III-V General. Compound semiconductor devices for operation at elevated temperatures (H. Hartnagel). IVa: Smart Power Technology. Smart power devices (J. Tihanyi). IVb: Large Area Electronic, Sensors, Microsystems. Amorphous Si TFT's and their applications (F. Morin). Impact of new chip technologies on telecommunications (D. Rabaey). VIa: Non-Volatile Memories. Ferro-electrics for non-volatile memories (R. Cuppens et al.). VIb: Higher Order Transport Models. Monte Carlo simulation of charge transport in semiconductor devices (P. Lugi). VIc: III-V mu-Wave Devices. Current status of heterojunction bipolar and high-electron mobility transistor technologies (D. Pavlidis). VIIa1: Si Heterojunctions and Bipolar Devices. SiC growth and application to high speed SiHBT's (T. Sugli et al.). VIIb: Silicides-RTP - Shallow Junctions. Avoiding dislocations in ion implanted silicon (F. Saris et al.). VIIc: III-V mu-Wave Devices. Advanced III-V HEMT technology for microwave and millimeter-wave applications (A. Long, I. Eddison). VIIIa: Si Heterojunction Devices. Heterojunction bipolar transistors with SiGe base (A. Pruijmboom et al.). VIIIb: Hot Carrier Degradation of MOSFET's. Dynamic effects in hot-carrier degradation relevant for CMOS operation (W. Weber, M. Brox). VIIIc: Process Modeling. IXa: Plenary Invited Papers. The Future for MultiChip Modules (M. Sage). SiGe heterojunctions: Devices and applications (M. Arienzo et al.). Xa: Si Bipolar Devices and Technology. Xb. Interconnection. Limitations of electrical interconnections in electronic systems (T. Noll). Xc: Characterization. Measurements of two-dimensional doping profiles (R. Subrahmanyan). XIa: Solid State Imagers. Technology and applications of high-density sensors (R. Koshla). XIb: Silicides-RTP-Shallow Junctions. Shallow junctions, silicide requirements and process technology for sub 0.5 mum CMOS (B. Davari). XIc: Characterization and Modeling. On wafer high frequency device characterization (M. Koolen). XIIa: Silicon Technology. XIIb: Solid-State Devices. XIIc: Device Modeling. XIIIa: SOI. Trends in Silicon-on-Insulator Technology (J.-P. Colinge). XIIIb. Low Temperature Devices. A survey of MOS device physics for low temperature electronics (G. Ghibaudo et al.). SiGe-base bipolar transistors for cryogenic BICMOS applications (J.