Solid State Device Research '91: Proceedings of the 21st European Solid State Device Research Conference (ESSDERC '91), Montreux, Switzerland, 16-19 September 1991

The ESSDERC conference constitutes the major European forum for discussing research and development work on semiconductor devices and technology. The 141 papers, including 17 invited papers, review subjects of recent interest or report on major coordinated research programs in Europe and Japan. The main focus of the contributions is on traditional silicon-based devices and technology, oriented towards integrated circuits. Papers are also included on micro- and optoelectronic devices based on 3-5 compound semiconductors, and the design and fabrication of semiconductor-based microsensors and microactuators. The volume will be an indispensable reference source to researchers from different but related areas, in promoting the exchange of experience and in emphasizing the unifying aspects of the wide interdisciplinary area of semiconductor science and technology.

Table of Contents:
(Abbreviated) Sessions: IA. Silicon Heterojunction Devices. Recent progress in silicon homo-and heterojunction bipolar technology (L. Treitinger). IB. Modeling. Nonstationary electron transport in realistic submicron BP-SAINT GaAs MESFETs evaluated by ensemble Monte Carlo simulation (Y. Yamada). IC. Compound Semiconductor Devices. ESPRIT II projects on compound semiconductors (J. Mun, A. Mbaye). Results of the superlattice devices project in Japan (T. Moriya et al.). IIA. Characterization. Applications of scanning tunneling microscopy to the characterization of semiconductor technologies and devices (H. Salemink, O. Albrektsen). IIB. Epitaxial Layers on Silicon. Strain relaxation in GeSi layers with uniform and graded composition (S.C. Jain et al.). IIC. Compound Semiconductor Processing. Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure (A. Paraskevopoulos et al.). IIIA. Silicon on Insulator Technology. Results of the three-dimensional integrated circuits project in Japan (T. Moriya et al.). IIIB. Modeling. Worst-case simulation using principal component analysis techniques: An investigation (J.A. Power et al.). IIIC. CMOS Technology. CMOS technologies for logic applications (H. Mingam). IIID. Compound Semiconductor Optoelectronics. GaAs opto-electronic integrated circuits for high speed optical communications (D.L. Rogers). IIIE. Photon Detectors. Planar 100 GHz silicon detector circuits (K.M. Strohm et al.). IVA. Compound Semiconductor Devices. Heterostructure bipolar transistors based on InP and application to integrated circuits for lightwave communication (R.N. Nottenburg). IVB. Compound Semiconductor Circuits. GaAs and Si MMIC building blocks: A moot point revisited (M. Rocchi). IVC. Silicon on Insulator Devices. Poly-crystalline silicon thin film devices for large area electronics (S.D. Brotherton). IVD. Dynamic Memories. High capacitance isolated surrounding stacked trench cell for advanced DRAMs (F. Hofmann et al.). IVE. Power Devices. Parasitic breakdown control in HVIC process integration (A.F.J. Murray et al.). VA. Silicon Microsensors and Microactuators. Silicon microsensors: Construction, design and performance (H. Guckel). Silicon micromachining for sensor applications (F. Rudolf, J. Bergqvist). VB. Hot Carrier Effects in MOSFETs. Limitations of digital CMOS-processes for analog applications due to channel length modulation and hot carrier degradation (M. Steimle, H.M. Muhlhoff). VC. Silicon Processing. Rapid thermal processing and thin film technologies (K. Maex). VIA. BICMOS and Bipolar Technologies. Future trends in BICMOS technology (A.R. Alvarez). BICMOS - The technology for integrating systems onto one silicon IC (H. Klose). VIB.