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Understanding Semiconductor Devices

Understanding Semiconductor Devices


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About the Book

Understanding Semiconductor Devices is a main text for the advanced or graduate level course taught in virtually all departments of electrical engineering. The strength of the book is its integration of CAD tools which provide direct links to 'real life' issues such as reliability. An amalgamation of theoretical principles means underlying scientific concepts are “discovered” as needed, not just introduced as inventory knowledge. Dimitrijev makes extensive use of diagrams and the text is complete with examples and effective exercises. Key Features: • Comprehensive depth: explanations/introduction of device concepts that enable an easy understanding of the internal mechanisms of device operation • Uses a motivating 'electronics-to-physics' approach, providing appropriate context and a continuous progression from the common-sense towards more abstract concepts • Provides not only coverage of all the important aspects of modern semiconductor devices, but also uniquely links the theoretical principles to real life issues • Contemporary contents, in particular the unique presentation of SPICE models and parameters Ancillary material: • Accompanying Microsoft PowerPoint® overheads are available on CD from www.oup-usa.org/college • Instructor's manual with transparency masters: 0195139488 Contents: Preface I. The Fundamentals Resistors: Introduction to Semiconductors Capacitors: Reverse-Biased P-N Junction and MOS Structure Diodes: Forward-Biased P-N Junction and Metal-Semiconductor Contact Effects Basics of Transistor Applications MOSFET BJT II. Advanced Topics Advanced and Specific IC Devices and Technologies Photonic Devices Microwave FETs and Diodes Power Devices Semiconductor Device Reliability Quantum Mechanics Appendices: Basic Integrated Circuit Concepts and Economics Crystal Lattices, Planes, and Directions Hall Effect and Summary of Kinetic Phenomena Summary of Equations and Key Points List of Selected Symbols Bibliography Answers to Selected Problems Index

Table of Contents:
Preface PART 1: THE FUNDAMENTALS 1. Resistors: Introduction to Semiconductors 1.1: The Basics: Resistor Structure and Drift Current 1.2: Insight Into Conducitivity Ingredients: Chemical-Bond Model 1.3: Making a Semiconductor Resistor: Lithography and Diffusion 1.4: Carrier Mobility 1.5: Energy-Band Model 2. Capacitors: Reverse-Biased P-N Junction and MOS Structure 2.1: Basic Applications 2.2: Reverse-Biased P-N Junction 2.3: C-V Dependence of the Reverse-Biased P-N Junction: Solving the Poisson Equation 2.4: SPICE Parameters and Their Measurement 2.5: Metal Oxide Semiconductor (MOS) Capacitor and Thermal Oxide 3. Diodes: Forward-Biased P-N Junction and Metal-Semiconductor Contact 3.1: Rectifying Diodes: Fundamental Effects and Models 3.2: SPICE Models and Parameters, Stored-Charge Capacitance, and Temperature Effects 3.3: Reference Diodes: Breakdown Phenomena 3.4: Schottky Diodes: Metal-Semiconductor Contact 4. Basics of Transistor Applications 4.1: Analog Circuits 4.2: Digital Circuits 5.: MOSFET 5.1: MOSFET Principles 5.2: MOSFET Technologies 5.3: MOSFET Modeling 5.4: SPICE Parameters and Parasitic Elements 6. BJT 6.1: BJT Principles 6.2: Bipolar IC Technologies 6.3: BJT Modeling 6.4: SPICE Parameters 6.5: Parasitic Elements Not Included in Device Models PART 2: ADVANCED TOPICS 7. Advanced and Specific IC Devices and Technologies 7.1: Deep Submicron MOSFET 7.2: Memory Devices 7.3: Silicon-on-Insulator (SOI) Technology 7.4: BICMOS Technology 8. Photonic Devices 8.1: Light-Emitting Diodes (LED): Carrier Recombination 8.2: Photodetectors and Solar Cells: External Carrier Generation 8.3: Lasers 9. Microwave FETs and Diodes 9.1: Gallium-Arsenide versus Silicon 9.2: JFET 9.3: MESFET 9.4: HEMT 9.5: Negative Resistance Diodes 10. Power Devices 10.1: Power Devices in Switch-Mode Power Circuits 10.2: Power Diodes 10.3: Power MOSFET 10.4: IGBT 10.5: Thyristor 11. Semiconductor Device Reliability 11.1: Basic Reliability Concepts 11.2: Failure Mechanisms 11.3: Reliability Screening 11.4: Reliability Measurement 12. Quantum Mechanics 12.1: Wave Function 12.2: Heisenberg Uncertainty Principle 12.3: Schr:odinger Equation Appendices A: Basic Integrated Circuit Concepts and Economics B: Crystal Lattices, Planes, and Directions C: Hall Effect and Summary of Kinetic Phenomena D: Summary of Equations and Key Points E: Contents of Computer Exercises Manual List of Selected Symbols Bibliography Answers to Selected Problems Index


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Product Details
  • ISBN-13: 9780195131864
  • Publisher: Oxford University Press Inc
  • Publisher Imprint: Oxford University Press Inc
  • Language: English
  • ISBN-10: 019513186X
  • Publisher Date: 24 Feb 2000
  • Binding: Hardback
  • Weight: 1176 gr


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