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A Study of Hafnium Dioxide-Based Moscaps and Mosfets on III-V Substrates with a Thin Germanium Interfacial Passivation Layer
A Study of Hafnium Dioxide-Based Moscaps and Mosfets on III-V Substrates with a Thin Germanium Interfacial Passivation Layer
By: Hyoung-Sub Kim
Publisher: Proquest, Umi Dissertation Publishing
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AED132
Binding:
Paperback
Release:
01 Sep 2011
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