Processing and Characteristics of Solid-State Structures

The processing and properties analysis of semiconductor structures are standing at the cutting edge of technological innovation, propelling advancements in the production of solid-state electronics. These technologies require a range of sophisticated and precise operations and are crucial in modifying materials to achieve the desired electrical characteristics of completed structures. The presented special edition will be an invaluable resource for engineers and researchers involved in the development in the area of semiconductor technologies.

Table of Contents:
Preface Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation Modeling the Charging of Gate Oxide under High Electric Field Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD