Integrated Processing for Micro- and Optoelectronics: Proceedings of Symposium D on Integrated Processing for Micro- and Optoelectronics of the 1993 E-MRS Spring Conference, Strasbourg, France, 4-7 May

Table of Contents:
Preface and lntroduction. Supporting Organizations and Sponsors. Advanced Integrated Processing Tool Approaches Fast-cycle-time single-wafer IC manufacturing (M.M. Moslehi et go. Adaptable IC manufacturing systems for the 21st' centuary (K.C. Saraswat). Using simulation to analyze integrated tool performance in semiconductor manufacturing (J. Mauer, R. Schelasin). A radiant heated reactor with multistep process capability (L.J. Quinn et al). The study of selectivity in silicon selective epitaxial growth (L. Ye, B.M. Armstrong, H.S. Gamble). Tool, Process and Material. Single wafer epitaxy of Si and SiGe 91 using UHV-CVD (F. Glowacki, Y Campidelli). Charge transfer in si / Sil.xGex on doped heterostructures grown by RTCVD (P Warren et al). Growth of b-sic layers by rapid thermal chemical vapour deposition (S.P. Chiew et al.). Cluster Tools and process strategy. Interface engineering in silicon semiconductor processing using a vacuum cluster tool (M. Hendriks). integrated system for deposition of polysilicon and WSix films (I. Beinglass, A.K. Sinha). Integrated processing of stacked-gate heterostructures: Plasma-assisted low temperature processing combined with rapid thermal high-temperature processing (V.Misra et al). cleaning and Diagnosis. Integration of wet chemical processing with low-temperature plasma-assisted processes for the formation of device quality Si/SiO2 interfaces on Si(I I 1) surfaces (Y. Yasuda et al). Real time optical diagnostics during pulsed lazer induced surface cleaning and oxidation (C.N. Afonso, F Vega, J. Solis). In-situ thickness measurement of MOVPE grown GaAs/GaA I As by laser reflectometry (Y Raffle et al.). RHEED investigation of metal epataxies and multilayers (K. Mae et al.). Experimental examination of strained semiconductor samples using photoacoustic diagnostic methods (B.A. Tsyganok, I.A. Krivoken, A.D. Belyaev). Kinetic energy and mass distributions of ablated species formed during pulse laser deposition (G.C. Tyrrell et al.). Cluster processing. Multichamber processing for optoelectronics (L.R. Harriott et al.).integration of plasma cleaning and light-assisted CVD for the passivation of Ill-V semiconductor surfaces (0. Dulac, YI. Nissim). Dry etch, integrated processing for rnicro- and optoelectronics (S.J. Pearton, A. Katz). Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing -(D. Marshall, R.B. Jackman). (NH4)2Sx passivation treatment and UVCVD stabilization for GaInP/GaAs heterojunction bipolar transistors (H. Sik et al). Double-step integrated deposition process for multilayers with accurate peridicity (A.I. Usoskin et al). Photoablating characteristics of polymers irradiated by excimer laser with high repetition rates (K. Ito, M. Moriyasu). Time resolved ablation of polymers and inorganic crystals (S. PreuB, M. Spath, M.Stuke). low temperature growth of highly transparent c-axis oriented orientated ZnO thin films by pulsed laser deposition (S.Arnirhaghi et al). Integrated