High-k Gate Dielectrics for CMOS Technology
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High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

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About the Book

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Table of Contents:
- Scaling and Limitation of Si-based CMOS - Issues in High-k Gate Dielectrics and Its Stack Interfaces - UV Engineering of High-k Thin Films - Atomic Layer Deposition Process of Hf-based high-k Gate Dielectric Film on Si Substrate - Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications - Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3 ) for High-k Gate Insulators - Characterization of High-k Dielectrics Internal Structure by X-Ray Spectroscopy and Reflectometry - Rare Earth Oxides as High-k Gate Dielectrics for Advance Device Architectures - The Interaction Challenges with Novel Materials in Developing High Performance and Low Leakage High-? /Metal Gate CMOS Tranistors - Interfacial Dipole Effects in High-k Gate Stacks - Metal Gate Electrode for Advanced CMOS Application - Metal-Gate/High-? CMOS Evolution from Si to Ge Platform - Theoretical Progress on GaAs Surface and GaAs/High-? Interface - III-V MOSFETs with ALD High-k Gate Dielectrics - High-k Dielectrics in Ferroelectric Gate Field Effect Transistor for Nonvolatile Memory Applications - Rare Earth Oxides as High-k Gate Dielectrics for Advance Device Architectures - The Interaction Challenges with Novel Materials in Developing High Performance and Low Leakage High-? /Metal Gate CMOS Transistors


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Product Details
  • ISBN-13: 9783527646364
  • Publisher: John Wiley and Sons Ltd
  • Binding: Digital (delivered electronically)
  • No of Pages: 590
  • ISBN-10: 3527646361
  • Publisher Date: 10 Aug 2012
  • Language: English


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High-k Gate Dielectrics for CMOS Technology
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