Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces
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Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces

Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces

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About the Book

This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.

Table of Contents:
Surface Structural Determination.- Experimental.- Experimental Overview of Surface Structure Determination by RHEED.- Theory.- Surface Structural Determination Using RHEED.- Theory of RHEED by Reconstructed Surfaces.- Accurate Dynamical Theory for RHEED Rocking-Curve Intensity Spectra.- Inelastic Effects.- Inelastic Scattering Effects in RHEED and Reflection Imaging.- Excitation of Dielectric Spheres by Electron Beams.- Resonance and Channeling Effects.- Resonance Effects in RHEED.- Inelastic Scattering and Secondary Electron Emission under Resonance Conditions in RHEED from Pt(111).- Adatom Site Determination using Channeling Effects in RHEED on X-ray and Auger Electron Production.- A Note on the Bloch Wave and Integral Formulations of RHEED Theory.- Disorders and Steps in Electron Diffraction.- Diffraction from Disordered Surfaces: An Overview.- Theory of Electron Scattering from Defect: Steps on Surfaces with Non-Equivalent Terraces.- Diffraction from Stepped Surfaces.- RHEED and Disordered Surfaces.- Temperature Diffuse Scattering in RHEED.- Temperature Dependence of the Surface Disorder on Ge(001) Due to Ar+ Ion Bombardment.- Two-Dimensional First-Order Phase Separation in an Epitaxial Layer.- Convergent Beam Diffraction.- Surface Convergent-Beam Diffraction for Characterization and Symmetry Determination.- Convergent Beam RHEED Calculations using the Surface Parallel Multislice Approach.- Reflection Electron Microscopy.- Using Conventional Instruments.- Reflection Electron Microscopy in TEM and STEM Instruments.- Reflection Electron Microscopy with Use of CTEM: Studies of Au Growth on Pt(111).- Application of Reflection Electron Microscopy for Surface Science (Observation of cleaned crystal surfaces of Si, Pt, Au and Ag).- Reflection Microscopy in a Scanning Transmission Electron Microscope.- Contrast of Surface Steps and Dislocations under Resonance, Non-resonance, Bragg, and Non-Bragg Conditions.- Microprobe Rheed.- Microprobe Reflection High-energy Electron Diffraction.- Scanning RHEED Studies of Silicide Formation in a UHV-SEM.- Low Energy Instruments.- Low Energy Electron Reflection Microscopy (LEEM) and Its Application to the Study of Si Surfaces.- Low Energy Scanning Electron Microscope.- Electron Diffraction Studies of Growth.- Semiconductors.- RHEED Intensity Oscillations During MBE Growth of III–V Compounds — An Overview.- RHEED Oscillations Control of GaAs and AlAs MBE Growth Using Phaselock Modulated Beams.- The Contribution of Atomic Steps to Reflection High energy Electron Diffraction from Semiconductor Surfaces.- RHEED Studies of Growing Ge and Si Surfaces.- LEED Investigations of Si MBE onto Si (100).- Metals.- Quantitative Studies of the Growth of Metals on GaAs(110) Using RHEED.- RHEED Intensity Oscillations in Metal Epitaxy.- Theory.- Calculation of RHEED Intensity from Growing Surfaces.- Studies of Growth Kinetics on Surfaces with Diffraction.


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Product Details
  • ISBN-13: 9781468455823
  • Publisher: Springer-Verlag New York Inc.
  • Publisher Imprint: Springer-Verlag New York Inc.
  • Height: 254 mm
  • No of Pages: 556
  • Returnable: Y
  • ISBN-10: 1468455826
  • Publisher Date: 26 Feb 2012
  • Binding: Paperback
  • Language: English
  • Returnable: Y
  • Width: 178 mm


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