Functional Materials and Materials Reliability

This special issue presents the research results and engineering developments in the area of silicon carbide semiconductor materials for power electronics and the latest composite and polymer materials for machinery and textile production. The special edition will be useful to engineers whose activity is related to research and developments in the area of power electronics and modern composite and polymer materials.

Table of Contents:
Preface Chapter 1: Composite Materials and Structures Control of the Deformation Mode of Aluminum Foam-Filled Tubes as a Function of Foam Porosity Crashworthiness Analysis of Vehicle Crash-Box Filled with Aluminium Foam Improving Fiber-Matrix Compatibility by Surface Modification of Coconut Coir Fiber Using White Rot Fungi Ramie Fiber Woven Composite: The Effect of Feedrate Variation on the Tensile Strength of the Open Hole in the Drilling Mathematical Model of Shear Stress Transfer at Fiber-Matrix Interface of Composite Material Study on the Mechanical Properties and Behavior of Corrugated Cardboard under Tensile and Compression Loads Chapter 2: Functional Materials Modification of Polyester Properties through Functionalization with PVA Cellulosic Textile Materials Functionalization with Formic Acid and Improvement of their Properties First-Principles Insights into the Acetic Acid Sensing Capability of the C39N Armchair Nanotube Chapter 3: Reliability of Silicon Carbide Metal Oxide Semiconductor Devices Bias-Induced Instability of 4H-SiC CMOS On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs Robustness of SiC MOSFETs under Repetitive High Current Pulses Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress Chip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 Cycles Avalanche Robustness Investigation of SiC Avalanche Diodes at High Temperatures AC-Stress Degradation in SiC MOSFETs Power Cycling on Lateral GaN and β-Ga2O3 Transistors Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages Reliability and Standardization for SiC Power Devices Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate