Beam Injection Assessment of Microstructures in Semiconductors

The characterisation of semiconductors is of key importance in preparing and applying semiconductors in industry. Volume is indexed by Thomson Reuters CPCI-S (WoS). The present work deals with theoretical and experimental topics which are related to the assessment of microstructures in semiconductors by means of beam injection and related methods.

Table of Contents:
Impurity Concentration Mapping in Mulitcrystalline Silicon Wafers Single Contact Beam Induced Current Phenomena - A Review Challenging the Spatial Resolution Limits of CL and EBIC EBIC Investigation of a 3-Dimensional Network of Inversion Channels in Solar Cells on Silicon Ribbons Electrical Behaviour of Crystal Defects in Silicon Solar Cells LBIC Control Mapping of Textured Silicon Thin Film Obtained by Liquid Phase Epitaxy on Transferable Silicon Grid Beam Injection Studies of Dislocations and Oxygen Precipitates in Semiconductor Silicon Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC Simulation of EBIC Contrast for Extended Defects Inclined to the Surface Reconstruction of Diffusion Length Distribution by the Modulated EBIC and OBIC Cathodoluminescence Study of the Y0 Emission from ZnSe Films Recombination Properties of Defects in Gallium Nitride Cathodoluminescence from Nanocrystals in Mechanically Milled Silicon Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy Cathodoluminescence Depth Profiling of Ge-Implanted SiO2 Layers Luminescence Centers Characterization in A2B6 Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy Multi-Band Cathodoluminescence Microscopy for Materials Science SEM CL In-Situ Observation during Dislocation Motion in GaAs and CdTe Semiconductor Inspection System for Yield Enhancement Formation and Current-Voltage Characteristics of SiC/Si-dot/SiC Resonant Tunneling Diodes Excitonic Emission from High-Quality Homoepitaxial Diamond Film Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond Scanning Probe Field Emission Current Measurements on Polycrystalline Diamond Films Surface Characterization of Plasma Etched DLC Films by Scanning Tunneling Microscopy and Atomic Force Microscopy Field Emission Characteristics of Plasma Enhanced Chemical Vapor Deposited Diamond-Like Carbon Films Using Scanning Probe Measurements Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance MC-IR-LST and TEM Combined Analysis of Defects in the OSF-Ring of Cz-Silicon Crystals An In-Situ Observation of Dislocations and Crystal-Melt Interface during the Melting of Silicon Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus Effects of Lattice Defects on Degradation of Flash Memory Cell Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination Defect Characterization in Multicrystalline Silicon Using Scanning Techniques Minority Carrier Lifetime Scan Maps Applied to Metallic Impurity Detection in Silicon Wafers Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si Rapid Diffusion of Titanium along Grain Boundaries in Polysilicon during Electron Beam Evaporation EBIC/XPS Study of the Antimony Equilibrium Segregation at Germanium Surface Luminescence Studies on InxGa1-xN/GaN Multiple Quantum Wells by Selective Excitation Spectroscopy Cathodoluminescence of the Composite Nanoscale Dendrite - Like GaAs-Ge Epitaxial Heterostructure SEM-Motion Picture System Observation of Moving High-Field Domains in Semi-Insulating GaAs Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs Secondary Electron Emission Induced by Deep Level Defects in GaAs Interaction of Copper and Sulfur with Dislocations in GaAs Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2 Formation of Silicon Nanoclusters in Silicon Oxide Using an Electron Beam Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron Deep Levels in Bulk-ZnSe Grown by Bridgman Method Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy The Relaxation of the ZnO Single Crystals (000-1) Surface TEM Observation of Barium Titanate Thin Films Consisting of Nano-Sized Single Crystals Prepared by Sol-Gel Processing The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam A System for Ultra-Fast Transient Ion and Pulsed Laser Current Microscopies as a Function of Temperature Visualization of Electron Beam Charge Storage and Thermal Release in Thin Insulating Layers Development of an Ultra-Precision Positioner and its Applications Photoabsorption Spectroscopy on Nanometer Scale by Scanning Tunneling Microscopy Scanning Capacitance Microscopy on Semiconductor Materials