Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Home > Science, Technology & Agriculture > Electronics and communications engineering > Electronics engineering > Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)


     0     
5
4
3
2
1



Out of Stock


Notify me when this book is in stock
X
About the Book

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

Table of Contents:
Introduction on Scaling Issues of Conventional Semiconductors.- Basic Concept of Field Effect Transistors.- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors.- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor.- Conclusion and Futureworks on High Voltage Application of Graphene.

About the Author :
Mahdiar Ghadiry is a postdoctorate in electronics at the University of Malaya (UM), received his PhD in microelectronics, and has more than six years of experience at the university including managing, lecturing, and supervising master’s and degree-level students. He has an extensive research background and has published more than 30 ISI journal articles and 3 books. In addition, he has been involved in the electronics industry for three years, and has more than four years of experience in integrated circuit (IC) design and embedded system design as an employee of the Electronic Components Industries (ECI), which is the biggest IC design company in Iran. Dr. Iraj Sadegh Amiri received his B.Sc (Applied Physics) degree from the Public University of Urmia, Iran in 2001 and a gold medalist M.Sc. from the University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in photonics in January 2014. He has published well over 350 academic journal/conference papers and books/chapters on optical soliton communications, telecommunications, fiber lasers, laser physics, waveguide fabrication and application in photonics, photonics, optics, nonlinear fiber optics, quantum cryptography, and bioengineering. He was a junior researcher at the University Technology Malaysia (UTM), Laser and Photonics Center and a postdoctoral research fellow at the University of Malaya (UM), Photonics Research Center (PRC). Currently, he is a senior lecturer in the University of Malaya (UM), Photonics Research Center (PRC) under the directorship of Professor Dr. Harith Ahmad.


Best Sellers


Product Details
  • ISBN-13: 9789811065491
  • Publisher: Springer Verlag, Singapore
  • Binding: Paperback
  • Language: English
  • Returnable: Y
  • Width: 155 mm
  • ISBN-10: 9811065497
  • Publisher Date: 16 Nov 2017
  • Height: 235 mm
  • No of Pages: 86
  • Series Title: SpringerBriefs in Applied Sciences and Technology


Similar Products

Add Photo
Add Photo

Customer Reviews

REVIEWS      0     
Click Here To Be The First to Review this Product
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)
Springer Verlag, Singapore -
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)
Writing guidlines
We want to publish your review, so please:
  • keep your review on the product. Review's that defame author's character will be rejected.
  • Keep your review focused on the product.
  • Avoid writing about customer service. contact us instead if you have issue requiring immediate attention.
  • Refrain from mentioning competitors or the specific price you paid for the product.
  • Do not include any personally identifiable information, such as full names.

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor: (SpringerBriefs in Applied Sciences and Technology)

Required fields are marked with *

Review Title*
Review
    Add Photo Add up to 6 photos
    Would you recommend this product to a friend?
    Tag this Book Read more
    Does your review contain spoilers?
    What type of reader best describes you?
    I agree to the terms & conditions
    You may receive emails regarding this submission. Any emails will include the ability to opt-out of future communications.

    CUSTOMER RATINGS AND REVIEWS AND QUESTIONS AND ANSWERS TERMS OF USE

    These Terms of Use govern your conduct associated with the Customer Ratings and Reviews and/or Questions and Answers service offered by Bookswagon (the "CRR Service").


    By submitting any content to Bookswagon, you guarantee that:
    • You are the sole author and owner of the intellectual property rights in the content;
    • All "moral rights" that you may have in such content have been voluntarily waived by you;
    • All content that you post is accurate;
    • You are at least 13 years old;
    • Use of the content you supply does not violate these Terms of Use and will not cause injury to any person or entity.
    You further agree that you may not submit any content:
    • That is known by you to be false, inaccurate or misleading;
    • That infringes any third party's copyright, patent, trademark, trade secret or other proprietary rights or rights of publicity or privacy;
    • That violates any law, statute, ordinance or regulation (including, but not limited to, those governing, consumer protection, unfair competition, anti-discrimination or false advertising);
    • That is, or may reasonably be considered to be, defamatory, libelous, hateful, racially or religiously biased or offensive, unlawfully threatening or unlawfully harassing to any individual, partnership or corporation;
    • For which you were compensated or granted any consideration by any unapproved third party;
    • That includes any information that references other websites, addresses, email addresses, contact information or phone numbers;
    • That contains any computer viruses, worms or other potentially damaging computer programs or files.
    You agree to indemnify and hold Bookswagon (and its officers, directors, agents, subsidiaries, joint ventures, employees and third-party service providers, including but not limited to Bazaarvoice, Inc.), harmless from all claims, demands, and damages (actual and consequential) of every kind and nature, known and unknown including reasonable attorneys' fees, arising out of a breach of your representations and warranties set forth above, or your violation of any law or the rights of a third party.


    For any content that you submit, you grant Bookswagon a perpetual, irrevocable, royalty-free, transferable right and license to use, copy, modify, delete in its entirety, adapt, publish, translate, create derivative works from and/or sell, transfer, and/or distribute such content and/or incorporate such content into any form, medium or technology throughout the world without compensation to you. Additionally,  Bookswagon may transfer or share any personal information that you submit with its third-party service providers, including but not limited to Bazaarvoice, Inc. in accordance with  Privacy Policy


    All content that you submit may be used at Bookswagon's sole discretion. Bookswagon reserves the right to change, condense, withhold publication, remove or delete any content on Bookswagon's website that Bookswagon deems, in its sole discretion, to violate the content guidelines or any other provision of these Terms of Use.  Bookswagon does not guarantee that you will have any recourse through Bookswagon to edit or delete any content you have submitted. Ratings and written comments are generally posted within two to four business days. However, Bookswagon reserves the right to remove or to refuse to post any submission to the extent authorized by law. You acknowledge that you, not Bookswagon, are responsible for the contents of your submission. None of the content that you submit shall be subject to any obligation of confidence on the part of Bookswagon, its agents, subsidiaries, affiliates, partners or third party service providers (including but not limited to Bazaarvoice, Inc.)and their respective directors, officers and employees.

    Accept

    New Arrivals


    Inspired by your browsing history


    Your review has been submitted!

    You've already reviewed this product!