Morphological Organization In Epitaxial Growth And Removal: (14 Series on Directions in Condensed Matter Physics)

About the Book

This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories -- the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.

Table of Contents:
Theoretical basis - study of strain and temperature dependence of metal epitaxy, C. Ratsch et al; atomistic simulation methods, A.F. Voter; submonolayer nucleation and growth of 2D islands and multilayer mound formation during homoepitaxy, J.W. Evans and M.C. Bartelt; equilibrium shape of a coherent epitaxial cluster, C. Duport et al; dynamic scaling in epitaxial growth, S. Das Sarma; scaling and crossovers in models for thin film growth, A Pimpinelli et al; quantum effect in meta overlayers on semiconductor substrates, J.-H. Cho et al; semiconductor-on-semiconductor growth - self-organized island arrays in SiGe/Si multilayers, C. Teichert et al; morphological evolution of strained semiconductor films, D.E. Jesson; large scale surface evolution during MBE growth - mounding, C. Orme et al; growth structures of silicon homoepitaxy by chemical vapour deposition, H. Rauscher and R.J. Behm; metal-on-metal growth - two-dimensional island shapes, T. Michely and G. Comsa; ramified growth in metal on metal epitaxy, R.Q. Hwang; morphology and energy barriers in homoepitaxial growth and coarsening - a case study for Cu(100), J.F. Wendelken et al; the concept of two mobilities for growth manipulation, G. Rosenfeld et al; tailoring epitaxial growth of low-dimensional magnetic heterostructures by means of surfactants, J.J. de Miguel et al; cluster diffusion, coalescence and coarsening in metal(100) homoepitaxial systems, P.A. Thiel and J.W. Evans; metal-on-semiconductor growth - Ag on Si-surfaces -from insulator to metal, M.H. von Hoegen et al; metal on semiconductor growth at low temperatures, M.C. Tringides; growing atomically flat metal films on semiconductor substrates, C.-K. Shih; removal - spontaneous halogen etching of Si, J.H. Weaver and C.M. Aldao; surface morphology of ion bombarded Si(001) and Ge(001) surfaces, H.J.W. Zandvliet and I.S.T. Tsong.