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Home > Mathematics and Science Textbooks > Physics > Materials / States of matter > Condensed matter physics > Transport Simulation in Microelectronics: (v. 3 Progress in Numerical Simulation for Microelectronics S.)
Transport Simulation in Microelectronics: (v. 3 Progress in Numerical Simulation for Microelectronics S.)

Transport Simulation in Microelectronics: (v. 3 Progress in Numerical Simulation for Microelectronics S.)


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About the Book

This text unites the numerical simulation method for the diverse fields of rarefied gas dynamics, radiative heat transfer and charge transport in semiconductors by considering the underlying transport equations as variations of the Boltzmann equation. A distinguishing feature of this work is the combination of mathematical rigour with physically motivated approximations and assumptions to examine numerical simulation techniques and industrially important applications. Special attention is given to the discussion of methods and problems in the newly emerging field of ultra low pressure gas flows in microelectronics. The quasi-"Monte Carlo" methods, a little known but highly effective alternative to traditional "Monte Carlo" methods for integration and linear transport problems, is also featured. The book provides the general reader with an overview of the important issues which arise in the simulation of transport processes related to semiconductor fabrication. The specialist in one of the areas addressed should find the book a helpful introduction to the other fields.

Table of Contents:
Content.- 1 The Boltzmann Equation.- 1.1 The Liouville Equation.- 1.2 Rarefied Gases.- 1.2.1 Equilibrium.- 1.2.2 Knudsen Number and Fluid Equations.- 1.2.3 Multiple Species.- 1.2.4 Boundary Conditions.- 1.3 Radiation Transport.- 1.3.1 The Radiation Transport Equation.- 1.3.2 Boundary Conditions.- 1.4 Electron Transport.- 1.4.1 Classical Vlasov-Poisson.- 1.4.2 Semi-Classical Vlasov-Poisson.- 1.4.3 Semi-Classical Boltzmann Equation.- 1.4.4 Equilibrium.- 1.4.5 Hydrodynamic Equations.- 1.4.6 Electrons and Holes.- 1.4.7 Boundary Conditions.- 1.5 Summary.- 2 Modeling of Gas Flow.- 2.1 Typical Reactors.- 2.2 Hydrodynamic Equations.- 2.2.1 Balance Equations.- 2.2.2 Generalized Forces.- 2.3 Near Hydrodynamic Flows.- 2.3.1 Estimates of Transport Coefficients.- 2.3.2 Slip Boundary Conditions.- 2.4 Transition Regime Flows.- 2.4.1 Scattering Angle Models.- 2.4.2 Boundary Conditions.- 2.5 Free Molecular Flow.- 3 Numerical Methods for Rarefied Gas Dynamics.- 3.1 Direct Simulation Monte Carlo.- 3.1.1 Spatial Discretization.- 3.1.2 Time Step.- 3.1.3 Collision Step.- 3.1.4 Convection Step.- 3.1.5 Boundaries.- 3.2 Computing Results.- 3.3 Extensions.- 3.3.1 Multiple Species.- 3.3.2 Axisymmetric Flow.- 3.3.3 Gas Phase Chemical Reactions.- 3.4 Simplified Flows.- 3.4.1 Test Particle Method.- 3.4.2 Free Molecular Flow.- 4 Gas Transport Simulations.- 4.1 Near Hydrodynamic Effects.- 4.1.1 Determination of Slip Coefficients.- 4.1.2 The Diffusion Coefficient.- 4.2 UHV-CVD Reactor.- 4.3 Sputtering Reactors.- 4.3.1 The Reactor Model.- 4.3.2 Velocity Distributions.- 4.3.3 Collimated Sputtering.- 5 Modeling of Radiative Heat Transfer.- 5.1 Rapid Thermal Processing.- 5.2 Semi-transparent Materials.- 5.2.1 The McMahon Approximation.- 5.2.2 Example: Single Coating Layer.- 5.3 Optical Properties of Surfaces.- 5.4 Solution of the Integral Equation.- 5.4.1 The Series Solution.- 5.4.2 Specular Reflection.- 5.4.3 Diffuse Reflection.- 5.5 The Rendering Equation.- 6 Monte Carlo for Radiation Transport.- 6.1 Monte Carlo Solution Procedure.- 6.2 Quasi-Monte Carlo Methods.- 6.2.1 Discrepancy.- 6.2.2 Quasi-Random Sequences.- 6.2.3 Integration and Discrepancy.- 6.3 Coupling Radiation and Gas Transport.- 7 Radiation Transport Simulations.- 7.1 Case Study of an RTP Reactor.- 7.1.1 A Simplified Radiative Heat Transfer Reactor.- 7.1.2 Numerical Experiment.- 7.1.3 Numerical Results.- 7.1.4 Conclusions.- 7.2 Scalar Control RTCVD-reactor.- 7.3 Multi-variable Control RTCVD-reactor.- 8 Modeling of Charge Transport.- 8.1 Numerical Methods for Linear Transport.- 8.1.1 Event Based Monte Carlo.- 8.1.2 History Based Monte Carlo.- 8.2 Further Comparisons.- 8.2.1 Distribution Functions.- 8.2.2 Mass and Charge Currents.- A Monte Carlo Methods.- References.


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Product Details
  • ISBN-13: 9783764351687
  • Publisher: Birkhauser Verlag AG
  • Publisher Imprint: Birkhauser Verlag AG
  • Height: 230 mm
  • Returnable: N
  • Weight: 505 gr
  • ISBN-10: 3764351683
  • Publisher Date: 27 Jan 1995
  • Binding: Hardback
  • Language: English
  • Series Title: v. 3 Progress in Numerical Simulation for Microelectronics S.


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