Optical Imaging and Sensing: Materials, Devices, and Applications

Optical Imaging and Sensing Understand the future of optical imaging with this cutting-edge guide Optoelectronic devices for imaging and sensing are among the backbones of modern technology. Facilitating the mutual conversion of optical and electrical signals, they have applications from telecommunications to molecular spectroscopy, and their incorporation into photon-involved technologies is only growing. The rapid development of this field makes the need for a fully up-to-date introduction all the more critical. Optical Imaging and Sensing meets this need with a comprehensive guide to the novel materials and devices employed in optical imaging and sensing. Given the current revolution in new imaging materials, an introduction that fully incorporates the latest research is an indispensable tool for scientists and engineers in a huge range of fields. The technologies surveyed here promise to transform public security, 5G and next-generation wireless communication, clinical imaging, and many more. Optical Imaging and Sensing Readers will also find: Detailed discussion of materials including semimetallic graphene, semiconducting black phosphorous, and many more Discussion of devices from infrared photodetectors to nonlinear interferometers A thorough look forward to the future of the field Optical Imaging and Sensing is a useful reference for materials scientists, spectroscopists, semiconductor physicists, and engineers working in any field or industry involving optical imaging or sensing technology.

Table of Contents:
Preface ix 1 Introduction of Optical Imaging and Sensing: Materials, Devices, and Applications 1 Qimiao Chen, Hao Xu, and Chuan S. Tan 1.1 Optoelectronic Material Systems 1 1.1.1 Si Platform 1 1.1.2 Two-dimensional Materials and Their van der Waals Heterostructures 3 1.1.2.1 Graphene 3 1.1.2.2 Transition Metal Dichalcogenides 4 1.1.2.3 2D Heterostructures 5 1.2 Challenges and Prospect of Nano-optoelectronic Devices 5 1.2.1 III–V Compounds 6 1.2.2 Perovskites 7 1.2.3 Organic Optoelectronic Materials 7 References 8 2 2D Material-Based Photodetectors for Imaging 11 Wenshuo Xu, Zhuo Wang, and Andrew T. S. Wee 2.1 Introduction 11 2.2 Visible-Light Photodetectors 15 2.3 Infrared Photodetectors 21 2.4 Broadband Photodetectors 26 2.5 Plasmon-Enhanced Photodetectors 36 2.6 Large-Scale and Flexible Photodetectors 44 2.7 Summary 49 References 50 3 Surface Plasmonic Resonance-Enhanced Infrared Photodetectors 55 Boyang Xiang, Guiru Gu, and Xuejun Lu 3.1 Introduction 55 3.2 Brief Review of Basic Concepts of SPR and SPR Structures 56 3.2.1 Plasma Oscillations in Metals 56 3.2.2 Complex Permittivity and the Drude Model 56 3.2.3 Surface Plasmonic Waves at the Semi-infinite Dielectric and Metal Interface 57 3.2.4 Prism-Coupled Surface Plasmonic Wave Excitation 59 3.2.5 Surface Grating-Coupled Surface Plasmonic Wave Excitation 60 3.3 Surface Plasmonic Wave-Enhanced QDIPs 61 3.3.1 Two-Dimensional Metallic Hole Array (2DSHA)-Induced Surface Plasmonic Waves 61 3.3.2 2DSHA Surface Plasmonic Structure-Enhanced QDIP 64 3.4 Localized Surface Plasmonic Wave-Enhanced QDIPs 68 3.4.1 Localized Surface Plasmonic Waves 68 3.4.2 Near-Field Distributions 68 3.4.3 Nanowire Pair 69 3.4.4 Circular Disk Array for Broadband IR Photodetector Enhancement 71 3.5 Plasmonic Perfect Absorber (PPA) 72 3.5.1 Introduction to Plasmonic Perfect Absorber 72 3.5.2 Plasmonic Perfect Absorber-Enhanced QDIP 74 3.5.3 Broadband Plasmonic Perfect Absorber 76 3.5.4 2DSHA Plasmonic Perfect Absorber 76 3.6 Chapter Summary 76 References 78 4 Optical Resistance Switch for Optical Sensing 83 Shiva Khani, Ali Farmani, and Pejman Rezaei 4.1 Introduction 83 4.2 Graphene Optical Switch 85 4.2.1 dc Mode of the Gate Capacitor 87 4.2.2 AC Mode of the Gate Capacitor 89 4.3 Nanomaterial Heterostructures-Based Switch 93 4.3.1 Situation 1: n 2 L ≫ n 2 H 95 4.3.2 Situation 2: n 2 H ≫ n 2 l 96 4.3.3 Situation 3: n 2 H ≃ n 2 l 96 4.4 Modulation Characteristics 104 4.5 Summary 115 References 115 5 Optical Interferometric Sensing 123 Hailong Wang and Jietai Jing 5.1 Introduction 123 5.2 Nonlinear Interferometer 124 5.2.1 Experimental Implementation of Phase Locking 125 5.2.2 Quantum Enhancement of Phase Sensitivity 131 5.2.3 Enhancement of Entanglement and Quantum Noise Cancellation 136 5.3 Other Types of Nonlinear Interferometers 143 5.3.1 Nonlinear Sagnac Interferometer 143 5.3.2 Hybrid Interferometer with a Nonlinear FWM Process and a Linear Beam-splitter 151 5.3.3 Experimental Implementation of a Phase-Sensitive Parametric Amplifier 155 5.3.4 Interference-Induced Quantum-Squeezing Enhancement 160 5.4 Nonlinear Interferometric SPR Sensing 164 5.5 Summary and Outlook 173 References 173 6 Spatial-frequency-shift Super-resolution Imaging Based on Micro/nanomaterials 175 Mingwei Tang and Qing Yang 6.1 Introduction 175 6.2 The Principle of SFS Super-resolution Imaging Based on Micro/nanomaterials 177 6.3 Super-resolution Imaging Based on Nanowires and Polymers 178 6.4 Super-resolution Imaging Based on Photonic Waveguides 184 6.4.1 Label-free Super-resolution Imaging Based on Photonic Waveguides 184 6.4.2 Labeled Super-resolution Imaging Based on Photonic Waveguides 186 6.5 Super-resolution Imaging Based on Wafers 189 6.5.1 Principle of Super-resolution Imaging Based on Wafers 189 6.5.2 Label-free Super-resolution Imaging Based on Wafers 194 6.5.3 Labeled Super-resolution Imaging Based on Wafers 195 6.6 Super-resolution Imaging Based on SPPs and Metamaterials 197 6.6.1 SPP-assisted Illumination Nanoscopy 199 6.6.1.1 Metal–Dielectric Multilayer Metasubstrate PSIM 200 6.6.1.2 Graphene-assisted PSIM 202 6.6.2 Localized Plasmon-assisted Illumination Nanoscopy 203 6.6.3 Metamaterial-assisted Illumination Nanoscopy 204 6.7 Summary and Outlook 206 References 208 7 Monolithically Integrated Multi-section Semiconductor Lasers: Toward the Future of Integrated Microwave Photonics 215 Jin Li and Tao Pu 7.1 Introduction 215 7.2 Monolithically Integrated Multi-section Semiconductor Laser (MI-MSSL) Device 219 7.2.1 Monolithically Integrated Optical Feedback Lasers (MI-OFLs) 219 7.2.1.1 Passive Feedback Lasers (PFLs) 220 7.2.1.2 Amplified/Active Feedback Lasers (AFLs) 224 7.2.2 Monolithically Integrated Mutually Injected Semiconductor Lasers (MI-MISLs) 225 7.3 Electro-optic Conversion Characteristics 229 7.3.1 Modulation Response Enhancement 229 7.3.2 Nonlinearity Reduction 237 7.3.3 Chirp Suppression 238 7.4 Photonic Microwave Generation 238 7.4.1 Tunable Single-Tone Microwave Signal Generation 240 7.4.1.1 Free-Running State 240 7.4.1.2 Mode-Beating Self-Pulsations (MB-SPs) 242 7.4.1.3 Period-One (P1) Oscillation 244 7.4.1.4 Sideband Injection Locking 245 7.4.2 Frequency-Modulated Microwave Signal Generation 248 7.4.3 High-Performance Microwave Signal Generation Optimizing Technique 250 7.5 Microwave Photonic Filter (MPF) 254 7.6 Laser Arrays 256 7.7 Conclusion 259 Funding Information 261 Disclosures 261 References 261 Index 271

About the Author :
Jiang Wu, PhD, is a Full Professor at the University of Electronic Science and Technology of China (UESTC). He has previous research experience at University College London, UK, and is a Fellow of the Higher Education Academy, an IEEE Senior Member, and a Director of the Chinese Society for Optical Engineering. His research focuses on compound semicondutors and optoelectronic devices for sensing. He has published over 200 technical papers on optoelectronic devices, sensors, and related fields. Hao Xu, PhD, is a Research Fellow at the University of Electronic Science and Technology of China (UESTC) and a visiting researcher at Nanyang Technological University (NTU), China. He obtained his PhD in Photonics and Nanotechnology from University College London, UK, and his research focuses on nanoelectronics and optoelectronics.