Gettering and Defect Engineering in Semiconductor Technology XVI
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Home > Mathematics and Science Textbooks > Science: general issues > Nanosciences > Gettering and Defect Engineering in Semiconductor Technology XVI: (Volume 242 Solid State Phenomena)
Gettering and Defect Engineering in Semiconductor Technology XVI: (Volume 242 Solid State Phenomena)

Gettering and Defect Engineering in Semiconductor Technology XVI: (Volume 242 Solid State Phenomena)


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About the Book

Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany. The 7 1 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon;                     Chapter 2: Passivation and Defect Studies in Solar Cells;                Chapter 3: Intrinsic Point Defects and Dislocations in Silicon;                 Chapter 4: Light Elements in Silicon-Based Materials;                      Chapter 5: Properties and Gettering of Transition Metals in Silicon;             Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium;                                   Chapter 7: Thermal Properties of Semiconductors;                           Chapter 8: Luminescence and Optical Properties of Semiconductors;         Chapter 9: Nano-Sized Layers and Structures;                               Chapter 10: Wide-Bandgap Semiconductors;                          Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials

Table of Contents:
Preface and Committees Chapter 1: Growth of Mono- and Multi-Crystalline Silicon Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon Orientation Dependency of Dislocation Generation in Si Growth Process Recent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot 50 cm Size Seed Cast Si Ingot Growth and its Characterization Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash Chapter 2: Passivation and Defect Studies in Solar Cells Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si BO-Related Defects: Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration Discussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon Investigation into Efficiency-Limiting Defects in mc-Si Solar Cells Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon Low Temperature Internal Gettering of Bulk Defects in Silicon Photovoltaic Materials Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation Chapter 3: Intrinsic Point Defects and Dislocations in Silicon Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers Electronic Properties of Dislocations Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si Spatial Distribution of the Dislocation Trails in Silicon Chapter 4: Light Elements in Silicon-Based Materials Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon Metastable Defects in Proton Implanted and Annealed Silicon The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions Chapter 5: Properties and Gettering of Transition Metals in Silicon Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy Mössbauer Spectroscopy on Fe Impurities in Si Materials Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient A Density Functional Study of Iron Segregation at ISFs and Σ5-(001) GBs in mc-Si Determination of Activation Energy of the Iron Acceptor Pair Association and Dissociation Reaction Internal Gettering of Copper for Microelectronic Applications Segregation Gettering Model for Nickel in p/p+ Silicon Wafers Detection and Prevention of Palladium Contamination in Silicon Devices Modeling the Post-Implantation Annealing of Platinum Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon Boron-Related Defects in Low Temperature Irradiated Silicon Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals Interstitial Carbon in p-Type Copper-Doped Silicon Interaction of Interstitial Copper with Isolated Vacancies in Silicon Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 Si The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon Chapter 7: Thermal Properties of Semiconductors Heat Flow and Defects in Semiconductors: beyond the Phonon Scattering Assumption Reduced Thermal Conductivity in Silicon Thin-Films via Vacancies Chapter 8: Luminescence and Optical Properties of Semiconductors Ge and GeSn Light Emitters on Si Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon Defect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical Properties Chapter 9: Nano-Sized Layers and Structures A Nanoscale Adventure with Silicon: Synthesis, Surface Chemistry, and other Surprises Defect Composition in Acceptor Doped ZnO Quantum Structures ZnO Nanoparticle Formation in 64Zn+ Ion Implanted Al2O3 Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon Influence of Composition of Aqueous Electrolytes on Anisotropy of Porous Layer Formation Rate in Heavily Doped Silicon Chapter 10: Wide-Bandgap Semiconductors Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure A New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method Ab Initio Study of MgSe Self-Interstitial (Mgiand Sei) Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node Comparative Investigations of the Surface Damage of Monocrystalline Silicon Wafers by Scanning Infrared Reflection Examination and Raman Spectroscopy Non-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV Technology Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence


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Product Details
  • ISBN-13: 9783038356080
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 500
  • Spine Width: 25 mm
  • Width: 170 mm
  • ISBN-10: 3038356085
  • Publisher Date: 09 Feb 2016
  • Binding: Paperback
  • Language: English
  • Series Title: Volume 242 Solid State Phenomena
  • Weight: 990 gr


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