6th Forum on New Materials - Part C: (Volume 95 Advances in Science and Technology)

Collection of selected, peer reviewed papers from the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy. The 32 papers are grouped as follows: Chapter 1: Novel Functional Carbon Nanomaterials, Chapter 2: Transport in Inorganic Materials, Chapter 3: Non-Volatile Inorganic Memory Devices, Chapter 4: Novel Superconducting Materials.

Table of Contents:
Preface Chapter 1: Novel Functional Carbon Nanomaterials Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate Research of Diamond-Like Carbon Film Deposited by Double Pulsed Lasers Evolution of Cu Surface Morphology and its Effect on Graphene Synthesized by Chemical Vapor Deposition Liquid Crystal Assisted Selective Separation of Large Graphene Oxide and its Size Dependent Oxygen Reduction Catalytic Effect The Possibilities of Graphenes Application in Textronic Devices Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit Development of Carbon-Nanotube Composite Thread and its Application to "Thread Transistor" Energy Gap Associated to Photocatalytic Activity of MWCNT/TiO2/ZnO Nanocomposites Carbon Coils-Polyurethane Composites for the Shielding Materials of Electromagnetic Interference Chapter 2: Transport in Inorganic Materials The Influence of the Exterior Surface on Grain Boundary Mobility Measurements Protonic SOFCs Using Perovskite-Type Conductors Vacancy Diffusion under a Stress and Kinetic of Nanovoid Growth in Cubic Metals Chapter 3: Non-Volatile Inorganic Memory Devices Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation Resistive Switching Behavior in Undoped α-Fe2O3 Film with a Low Resistivity Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application Thermal Conductivity Measurement of a Sb2Te3 Phase Change Nanowire MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors Integration of STT-MRAMs for Embedded Cache Memories Chapter 4: Novel Superconducting Materials Superconductivity at Tc = 36.5 K in Na-Substituted SrFe2As2 Single Crystals Role of Mg-B-O Nanostructural Inhomogenities on the Performance of Superconducting MgB2 Microwave Measurements of Surface Resistance and Complex Conductivity of NdBaCuO Films Critical Current Density and Pinning Energy of Partial Melted Sm-Based Superconductor Critical Current of Bi-2212 Single Crystal by Doping Oxides as a Pinning Center High Critical Currents in Single Grain YBa2Cu3Oy Bulk Superconductors Produced by Infiltration-Growth Development of Density Functional Theory for Plasmon-Assisted Superconductivity Fabrication of MgB2 Bulk Magnets with High Critical Currents New Measurements of the Transition to the Normal State Induced by High Current Densities in High-Tc Superconductor Microbridges under Thermal Smallness Conditions