Silicon Carbide and Related Materials 2010: (Volumes 679-680 Materials Science Forum)

Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Table of Contents:
Committees and Preface Chapter 1: SIC Growth 1.1 Bulk Growth Enlargement Growth of Large 4H-SiC Bulk Single Crystal Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals Experimental Verification of a Novel System for the Growth of SiC Single Crystals Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique Polytype Stability of 4H-SiC Seed Crystal on Solution Growth Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method Effect of Low Frequency Magnetic Field on SiC Solution Growth Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method 1.2 Epitaxial Growth Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo Method Polarity Control of CVD Grown 3C-SiC on Si(111) Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2] Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy Chaper 2: SIC Characterization 2.1 Fundamental and Structural Properties Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation Strain Measurements on Nitrogen Implanted 4H-SiC On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC The Strong Field Transport in 4H- and 6H-SiC at Low Temperature Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy 2.2 Point Defects Defects in SiC: Theory Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC Electrically Active Defects in Electron Irradiated P-Type 6H-SiC Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional Iron-Related Defect Centers in 3C-SiC 2.3 Extended Defects Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a Electrical Activity of Structural Defects in 3C-SiC Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers Propagation of Stacking Faults in 3C-SiC Etch Pits on 4H-SiC Surface Produced by ClF3 Gas Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers 2.4 Surfaces and Interfaces Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface Microscopic Examination of SiO2/4H-SiC Interfaces Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer Chapter 3: SIC Processing 3.1 Doping and Implantation Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers Effects of Process Variations on Silicon Carbide Devices for Extreme Environments Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC 2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions 3.2 Surfaces and Interfaces Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing Theoretical Studies for Si and C Emission into SiC Layer during Oxidation 3C-SiC MOS Based Devices: From Material Growth to Device Characterization Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations Graded Etched Junction Termination for SiC Thyristors Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC 3.3 Nanostructures β-SiC NWs Grown on Patterned and MEMS Silicon Substrates Growth of SiC Microwires through Si Microwires Carburization Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions Chapter 4: SIC Devices 4.1 Diodes An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime Advances in Silicon Carbide Single Photon Detectors Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring SiC Zener Diode for Gate Protection of 4.5 kV SiCGT Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes 4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments 4.2 Field Effect Transistors Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules 1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches 600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs High-Temperature Reliability of SiC Power MOSFETs Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants 1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) Schottky Barrier 3C-SiC Nanowire Field Effect Transistor Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics Optically Triggered Power Switch Based on 4H-SiC Vertical JFET Optimization of SiC MESFET for High Power and High Frequency Applications 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation 4kV Silicon Carbide MOSFETs A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices 3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver Fabrication of P-Channel MOSFETs on 4H-SiC C-Face Use of Vacuum as a Gate Dielectric: The SiC VacFET 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts Characterisation of HfO2/Si/SiC MOS Capacitors Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs Pulse Current Characterization of SiC GTO Thyristors 4.3 Bipolar Transistors and Thyristors 1200 V SiC BJTs with Low VCESAT and High Temperature Capability Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation Current Gain Degradation in 4H-SiC Power BJTs High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination 600V-30A 4H-SiC JBS and Si IGBT Hybrid Module Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation 4.4 Circuits and Packaging Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application High Temperature Silicon Carbide CMOS Integrated Circuits 300°C Silicon Carbide Integrated Circuits 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier Fault Protection System for Current Source Inverter with Normally on SiC JFETs Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits A Molded Package Optimized for High Voltage SiC-Devices Chapter 5: Related Materials and Biosystems 5.1 Graphene and Carbon Nanotubes Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20) High Temperature Graphene Formation on Capped and Uncapped SiC Observations on C-Face SiC Graphene Growth in Argon Influence of Intercalated Silicon on the Transport Properties of Graphene Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001) 5.2 Nitrides and Other Materials InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode 5.3 Biocompatibility Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications Cellular Interactions on Epitaxial Graphene on SiC (0001) Substrates