Solid-State Power Devices: Circuitry and Characterizations

The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

• Preface
• 3^rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
• Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
• Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
• Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
• Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P⁺ Contacts
• Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
• 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
• Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
• Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
• A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
• SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
• High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
• Normally-Off 1200V Silicon Carbide JFET Diode with Low V_F
• On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
• Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
• Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
• Visualization of P⁺ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
• Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
• Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
• Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
• Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
• Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
• Comparison of Si CMOS and SiC CMOS Operational Amplifiers
• Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
• Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
• The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
• Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
• Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
• Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
• Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes