Materials Science Applications of Ion Beam Techniques: (Volumes 248-249 Materials Science Forum)

The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Table of Contents:
Preface Ion Beam Induced Amorphization of Crystalline Solids: Mechanisms and Modeling Surface Effect on the Nature of Damage Production in Ion-Irradiated Solids: A Molecular Dynamics Investigation The Thermal Spike Model: A Possible Way to Describe the Effects Induced in Y2O3 by Swift Heavy Ion Irradiations Stopping Power and Range Relations for Low and High Z Ions in Solids: A Critical Analysis Modeling of Ion Implantation and Diffusion in Si Crystal-Grid Investigation of Atomic Collision Cascades in Ionic Compounds Thermal Spike Description of the Damage Creation in Y3Al5O12 Induced by Swift Heavy Ions Track Formation in Metals under Swift Heavy Ion Bombardment Diffusion in Ion Irradiated Nickel: Determination of Atomic Mixing, Sink Strength and Fraction of Freely Migrating Defects Ion-Beam Modification of Semiconductors and Related Electronic Materials Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors Effects of Ion Irradiation on Ferromagnetic Thin Films Special Surface Structures in Surface Alloy Growth Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation Range Parameters of Aluminium Implanted Targets Identifitcation of Bandgap States in Semiconductors by Transmutation of Implanted Radioactive Tracers Hall Effect Measurements on Transmutation Doped Semiconductors Characterization of Cu/Al2O3 Interfaces after Heavy Ion Irradiation In-Depth Characterization of Damage Produced by Swift Heavy Ion Irradiation Using a Tapping Mode Atomic Force Microscope Hardness Enhancement and Crosslinking Mechanisms in Polystyrene Irradiated with High Energy Ion-Beams Diffusion Studies in Polymers Using MeV Ion Beams Ion Induced Passivation of Metal Surfaces: The Phenomenon and its Origins Flux Pinning by Columnar Defects in Bi2Sr2CaCu2O8-Thin Films Depth Resolved Oxygen Analysis at the Interfaces of Au-Al Layers Substrate Influence on Topography and Chemical Composition of Thin Metal Films Produced by Means of Self-Ion Assisted Deposition Radiation Damage and Amorphization Mechanisms in Xe+ Irradiated CuInSe2 Single Crystals Ion Beam Mixing in Epitaxial Ag/Fe/Ag-(001)-Layers Investigated with Ferromagnetic Resonance and X-Ray-Diffraction Thermal Depth Profiling of Nickel after He-Ion Irradiation The Role of Surface Carbon Contamination on the Tribological Properties of Ion-Implanted 100Cr6 Bearing Steel Ion Implantation into Stainless Steel - Depth Selective Phase Analysis with an Improved Mössbauer Technique Formation of Aluminum Gradient Films on Stainless Steel by Ion Implantation Studies on Ion Beam Modification and Analysis Using the Bucharest Cyclotron Microstructure and Tribology of Carbon Implanted High-Speed-Steel Investigation of High Fluence Carbon Ion Implanted Titanium Depth Distributions and Wear Behaviour of Ion Implanted Ti6Al4V Defect Formation in irradiated Nanostructured Materials TiN Coatings Formed by Dual Beam IBAD Technique Creation of the DLC Layer by the Dual Beam IBAD Technique Application of High Energy Ion Beams for Local Lifetime Control in Silicon Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis Lattice Damage of Relaxed Si1-xGex Alloys of Various Composition Implanted with 2 MeV Si Ions Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen Dose Rate and Temperature Dependence of the Crystallization Rate during IBIEC in InAs Damage Production in Ion Implanted III-V Compounds: A Comparative Study The Behaviour of 12B in CdTe Studied with β-NMR Techniques Ion Beam and Electrical Conductivity Analysis of Nanocrystalline α-BN and α-Al2O3 Ceramics Implanted with Ti+n Ions and Annealed Nucleation and Growth of the Amorphous Phase in Na-Irradiated Quartz Vacancy Type Defects in Proton Irradiated SiC On the Amorphization of the Si/Ge Superlattices upon Ion Bombardement Application of HIERDA to Strontium Bismuth Tantalate Ferroelectric Films Void Formation and Surface Rippling in Ge Induced by High Energetic Au Irradiation Micro-IBA and Micro-AMS for Geological Materials Long and Short Range Order in Ion Irradiated Ceramics Studied by IBA, EXAFS and Raman Progress in Non-Standard Defect Analysis by RBS Heavy Ion Recoil Time of Flight Method for Materials Analysis Transition-Metal Silicide Layer Formation, the Phases of Mixed Silicides Composition and Structure of Codeposited Layers on Plasma Facing Components in Controlled Fusion Devices: Ion Beam and Microscopy Studies Ion-Beam Analysis of Solar-Cell Materials Evaluation of Coatings Produced by Low-Energy Ion Assisted Deposition of Co on Silicon Application of the Combined Channeling Method at Higher Ion Energies on Cyclotron Corrosion Depth Profiles by Rutherford Backscattering Spectrometry and Synchrotron X-Ray Reflrectometry Hydrogen Elastic Recoil Detection Depth Resolution and Sensitivity as a Function of Sample Composition Investigation of the Morphology of Porous Silicon by Rutherford Backscattering Spectrometry Combining RBS and FTIR Spectroscopy for the Ge Analysis in Si1-xGex Single Crystals Hydrogen and Nitrogen Loss during ERD Analysis of Siliicon (Oxy)nitrides Composition and Structural Evolution of Al-Me Alloys (Me = Fe, Cu, Sb) Prepared by Means of Ultrarapid Quenching from the Melt Studied by RBS Technique Diffusion of Water into Quartz and Silica Glass Lattice Location of Hf in Near-Stoichiometric LiNbO3: RBS/Channeling and PAC Studies (1 - 3) MeV / amu Heavy Ion Irradiaiton Effects on Optical Properties of Al2O3 Ion Beam Analysis and Applications in On-Line Monitoring of Ion Induced Modifications of Materials Thin-Film Morphology and Rutherford Backscattering Spectrometry Electronic Sputtering and Desorption Effects in TOF-SIMS Studies Using Slow Highly Charged Ions like Au69+ Ion Channeling Study of GaN Single Crystals Highly Focused Ion Beams in Integrated Circuit Testing Atomic Structure and Electrical Properties of a Supertip Gas Field-Ion Source High Energy Ion Microprobes: Where are we going? Application of Highly Focused Ion Beams Use of an Ultra-High Resolution Magnetic Spectrograph for Materials Research Ion Beam Analysis with Monolayer Depth Resolution Applications of Ion Track Filters Theoretical and Experimental Study of the Stationary and Kinetic Characteristics of the Thermo-Field Ion Sources Status of a New Analytical Facility Based on the 2 MeV Electrostatic Accelerator in the Institute of Applied Physics