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Semiconductor Heterostructure

Semiconductor Heterostructure


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About the Book

The research and development of high electron mobility transistors (HEMTs) have made major contributions to epitaxial growth techniques and these improved techniques have enabled the fabrication of semi-conductor hetero-structures with precisely controlled hetero-interfaces. This, in turn, has triggered the development of other devices, such as resonant tunneling devices, that use quantum mechanical effects. This tract examines the fundamentals of these heterostructure devices and their applications. In Part 1, the physical principles and operational characteristics of HEMTs are described and their analogue and digital applications are covered. Part 2 considers a resonant tunneling hot electron transistor (RHET), a resonant tunneling bipolar transistor (RBT), and recent advances in technology using InGaAs-based materials. In addition, the microwave characteristics of these resonant tunneling devices are explained.

Table of Contents:
Part 1 High electron mobility transistors: introduction; HEMT principle and performance advantages - principle and technology - comparison with other high speed device approaches, HEMT performances in the submicron dimensional range; microwave HEMT for analogue applications: low noise HEMT, high power HEMT; HEMT LSI technology - material technology for HEMT fabrication, self-alignment device fabrication technology; HEMT LSI circuit implementations - logic circuits; memory circuits. Part 2 Resonant tunneling devices: introduction; resonant tunneling barriers using InGaAs-based materials; resonant tunneling hot electron transistors (RHETs) - RHET operation and application, RHET technology using InGaAs-based materials, modelling and performance analysis of RHETs, microwave analysis of RHETs; resonant tunneling bipolar transistors (RBTs) - RBT principle of operation, RBT technology using GaAs-based materials, RBT technology using inGaAs-based materials, microwave analysis of RBTs.


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Product Details
  • ISBN-13: 9782881243387
  • Publisher: Gordon and Breach
  • Publisher Imprint: Gordon & Breach Science Publishers Ltd
  • Language: English
  • Weight: 454 gr
  • ISBN-10: 288124338X
  • Publisher Date: 01 Feb 1989
  • Binding: Hardback
  • Returnable: N


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