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Home > Reference > Research and information: general > Research methods: general > Electronic Characterization of Defects in Narrow Gap Semiconductors: Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide
Electronic Characterization of Defects in Narrow Gap Semiconductors: Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

Electronic Characterization of Defects in Narrow Gap Semiconductors: Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide


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About the Book

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity. Patterson, James D. and Li, Wei-Gang Unspecified Center...


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Product Details
  • ISBN-13: 9781722372552
  • Publisher: Createspace Independent Publishing Platform
  • Publisher Imprint: Createspace Independent Publishing Platform
  • Height: 279 mm
  • No of Pages: 76
  • Spine Width: 4 mm
  • Weight: 200 gr
  • ISBN-10: 1722372559
  • Publisher Date: 06 Jul 2018
  • Binding: Paperback
  • Language: English
  • Returnable: N
  • Sub Title: Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide
  • Width: 216 mm


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Electronic Characterization of Defects in Narrow Gap Semiconductors: Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide
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