Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II: Volume 1432: (MRS Proceedings)

Symposium G, 'Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II', was held April 9–13 at the 2012 MRS Spring Meeting in San Francisco, California. Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to the materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallisation, bonding, packaging, etc. This symposium presented state-of-the-art results on reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin-film growth, wafer processing and device fabrication processes.

Table of Contents:
Part I. Laser Reliability and Defects: 1. Highly reliable 1060nm vertical cavity surface emitting lasers (VCSELs) for optical interconnect; 2. Design for reliability and common failure mechanisms in vertical cavity surface emitting lasers; 3. Thermomechanical modelling of high power laser diode degradation; 4. Study of the deep levels of a GaAs/p-GaAs12xBix heterostructure grown by molecular beam epitaxy; Part II. LEDS and Crystal Growth: 5. Local electronic structure and UV electroluminescence of n-ZnO:N/P-GaN heterojunction LEDs grown by remote plasma atomic layer deposition; 6. An easy approach to identify dislocation types in GaN films through selective chemical etching and atom force microscopy; 7. Enhanced light absorption in textured metal organic chemical vapour deposited (MOCVD) CdO thin films; 8. Free standing GaN nano membrane by laser lift-off method; 9. Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition; 10. Chemical vapor deposition of boron phosphide thin films; Part III. Characterization and Theoretical Calculation: 11. Absence of lateral composition fluctuations in aberration-corrected STEM images of an InGaN quantum well at low dose; 12. Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures; 13. TEM study on defects in epitaxial CdZnTe films deposited on (001)GaAs by close-spaced sublimation; 14. The occupancy of the threading dislocation lines within n-type gallium nitride: recent progress; Part IV. Recombination Enhanced Point Defect Reaction: 15. Feedback and inflation mechanism in successive multiphonon carrier captures at deep-level defects; 16. High-irradiance degradation studies of metamorphic 1eV GaInAs solar cells; 17. Ga-vacancy activation under low energy electron irradiation in GaN-based materials; Part V. HEMT Reliability: 18. GaN HEMT reliability: from time dependent gate degradation to on-state failure mechanisms; 19. Recent reliability progress of GaN HEMT power amplifiers; 20. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method; 21. Impact of the Al mole fraction in the bulk- and surface-state induced instability of AlGaN/GaN HEMTs; Part VI. Radiation Effect: 22. 8 MeV proton irradiation damage and its recovery by annealing on single-crystalline zinc oxide crystals; Part VII. Solar Cells and TFTS: 23. Temperature dependent characterization of imbedded InAs quantum dots in GaAs superlattice solar cell structures by high resolution X-ray diffraction; 24. Assessment of photovoltaic junction position in CdTe solar cells using a combined FIB-EBIC technique; 25. Characterization of rf-sputtered HfMgZnO thin films.