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Nucleation and Growth of Gan Islands by Molecular-Beam Epitaxy

Nucleation and Growth of Gan Islands by Molecular-Beam Epitaxy


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About the Book

This dissertation, "Nucleation and Growth of GaN Islands by Molecular-beam Epitaxy" by Ka-yan, Pang, 彭嘉欣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled NUCLEATION AND GROWTH OF GaN ISLANDS BY MOLECULAR-BEAM EPITAXY Submitted by PANG Ka Yan for the degree of Master of Philosophy at The University of Hong Kong in November 2005 Gallium Nitride (GaN) has attracted a lot of attention recently due to its wide energy band gap (3.39 eV) and high breakdown field (3.3 x 10 V/cm). These properties make GaN a promising candidate for high-temperature, high-power electronics and blue and green light-emitting device applications. Due to the lack of bulk GaN crystal, the material is usually grown epitaxially on foreign substrates. There is still much room for improvement for the quality of epitaxial GaN. It is known that GaN grown under excess-Ga flux conditions have a smooth surface, but the kinetics of film growth under such conditions remains unknown. The goal of this research was to study the kinetic processes of island nucleation and GaN growth during molecular-beam epitaxy (MBE). By examining nucleation island density, N, as a function of substrate temperature, T, the surface diffusion energy barrier, E, was derived. The scaling property of the island size distributions for different coverage was also revealed. It was found that the surface diffusion energy barrier of adatoms on the excess-Ga covered surface is 0.70 eV, assuming the critical island size for nucleation is 2, which agrees with the theoretical value. On the other hand, island size distributions at different coverage exhibit the scaling property, where the critical island size for nucleation is one under the conditions of experiments (i.e., Ga/N 1). DOI: 10.5353/th_b3677654 Subjects: Gallium nitride Nucleation Molecular beam epitaxy


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Product Details
  • ISBN-13: 9781374666702
  • Publisher: Open Dissertation Press
  • Publisher Imprint: Open Dissertation Press
  • Height: 279 mm
  • No of Pages: 72
  • Weight: 191 gr
  • ISBN-10: 137466670X
  • Publisher Date: 27 Jan 2017
  • Binding: Paperback
  • Language: English
  • Spine Width: 4 mm
  • Width: 216 mm

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