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On State Stability in Programmable Metallization Cell (Pmc) Devices

On State Stability in Programmable Metallization Cell (Pmc) Devices


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About the Book

Programmable Metallization Cell (PMC) technology has been shown to possess the necessary qualities for it to be considered as a leading contender for the next generation memory. These qualities include high speed and endurance, extreme scalability, ease of fabrication, ultra low power operation, and perhaps most importantly ease of integration with the CMOS back end of line (BEOL) process flow. One area where detailed study is lacking is the reliability of PMC devices. In previous reliability work, the low and high resistance states were monitored for periods of hours to days without any applied voltage and the results were extrapolated to several years (> 10) but little has been done to analyze the low resistance state under stress. With or without stress, the low resistance state appears to be highly stable but a gradual increase in resistance with time, less than one order of magnitude after ten years when extrapolated, has been observed. It is important to understand the physics behind this resistance rise mechanism to comprehend the reliability issues associated with the low resistance state. Since the basic working of a PMC device involves forming and dissolving a conductive filament repeatedly, another point of concern is the statistical variations amongst different cells that might affect the performance and reliability. This work focuses on analyzing the reliability of different low resistance states in PMC devices under normal operating conditions and under extreme stress. This is essential for establishing the reliability of their low resistance state and their ability to be successfully used in multilevel programming applications. Stability of various low resistance states and the effect of temperature on these states under no stress were analyzed. Current and voltage stress of different types and magnitudes were used to analyze their effect on the low resistance states. The effect of temperature coupled with current/voltage stress was also examined. Finally the possible mechanism(s) responsible for the increase in low resistance states under different types of stress were qualitatively examined.


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Product Details
  • ISBN-13: 9781243440921
  • Publisher: Proquest, Umi Dissertation Publishing
  • Publisher Imprint: Proquest, Umi Dissertation Publishing
  • Height: 246 mm
  • Weight: 159 gr
  • ISBN-10: 1243440929
  • Publisher Date: 01 Sep 2011
  • Binding: Paperback
  • Spine Width: 4 mm
  • Width: 189 mm


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On State Stability in Programmable Metallization Cell (Pmc) Devices
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