Lithography (Microfabrication)
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Home > Art, Film & Photography > Lithography (Microfabrication): Photolithography, Photoresist, Extreme Ultraviolet Lithography, Electron Beam Lithography, Multiple Patterning
Lithography (Microfabrication): Photolithography, Photoresist, Extreme Ultraviolet Lithography, Electron Beam Lithography, Multiple Patterning

Lithography (Microfabrication): Photolithography, Photoresist, Extreme Ultraviolet Lithography, Electron Beam Lithography, Multiple Patterning


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About the Book

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Pages: 55. Chapters: Photolithography, Photoresist, Extreme ultraviolet lithography, Electron beam lithography, Multiple patterning, Nanoimprint lithography, Local oxidation nanolithography, Stepper, Computational lithography, Dip-Pen Nanolithography, Micro contact printing, X-ray lithography, Cymer, Inc., Next-generation lithography, Immersion lithography, Photomask, Optical proximity correction, Interference lithography, Phase-shift mask, Maskless lithography, Nanofountain Probe, Stencil lithography, Hysitron, Soft lithography, Semtech Solutions, Multiphoton lithography, Mask shop, Triphenylsulfonium triflate, Quantum lithography, Magnetolithography, Off-axis illumination, PDMS stamp, Mask set, Micropatterning, Plasmonic nanolithography, Nanostencil, KMPR1000, Multilayer soft lithography. Excerpt: Extreme ultraviolet lithography (also known as EUV or EUVL) is a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. Neutral atoms or condensed matter cannot emit EUV radiation. Ionization must take place first. EUV light can only be emitted by electrons which are bound to multicharged positive ions; for example, to remove an electron from a +3 charged carbon ion (three electrons already removed) requires about 65 eV. Such electrons are more tightly bound than typical valence electrons. The existence of multicharged positive ions is only possible in a hot dense plasma. The Xe or Sn plasma sources for EUV lithography are either discharge-produced or laser-produced. Power output exceeding 100 W is a requirement for sufficient throughput. While state-of-the-art 193 nm excimer lasers offer intensities of 200 W/cm, lasers for producing EUV-generating plasmas need to be much more intense, on the order of 10 W/cm. This indicates the enormous energy burden imposed by switching from ...


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Product Details
  • ISBN-13: 9781157639213
  • Publisher: Books LLC, Wiki Series
  • Publisher Imprint: Books LLC, Wiki Series
  • Height: 246 mm
  • No of Pages: 56
  • Spine Width: 3 mm
  • Weight: 118 gr
  • ISBN-10: 1157639216
  • Publisher Date: 04 Sep 2011
  • Binding: Paperback
  • Language: English
  • Returnable: N
  • Sub Title: Photolithography, Photoresist, Extreme Ultraviolet Lithography, Electron Beam Lithography, Multiple Patterning
  • Width: 189 mm


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