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Home > Art, Film & Photography > Light-Emitting Diode Materials: Gallium Arsenide, Aluminium Gallium Arsenide, Aluminium Nitride, Indium Gallium Nitride, Gallium Phosphide
Light-Emitting Diode Materials: Gallium Arsenide, Aluminium Gallium Arsenide, Aluminium Nitride, Indium Gallium Nitride, Gallium Phosphide

Light-Emitting Diode Materials: Gallium Arsenide, Aluminium Gallium Arsenide, Aluminium Nitride, Indium Gallium Nitride, Gallium Phosphide


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Chapters: Gallium Arsenide, Aluminium Gallium Arsenide, Aluminium Nitride, Indium Gallium Nitride, Gallium Phosphide, Indium Gallium Phosphide, Aluminium Gallium Indium Phosphide, Aluminium Gallium Nitride, Gallium Arsenide Phosphide. Source: Wikipedia. Pages: 21. Not illustrated. Free updates online. Purchase includes a free trial membership in the publisher's book club where you can select from more than a million books without charge. Excerpt: 1238 C (1511 K) Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows. The IUPAC name "Gallium arsenide" is only applicable as a structurally descriptive name when gallium arsenide is in the gaseous phase; in the solid phase it polymerises into a macromolecule similar to silicon dioxide. In the compound, gallium has a +3 oxidation state. Gallium arsenide can be prepared by direct reaction from the elements which is used in a number of industrial processes: Alternative methods for producing films of GaAs include: 2 Ga + 2 AsCl3 2 GaAs + 3 Cl2 Ga(CH3)3 + AsH3 GaAs + 3 CH4Wet etching of GaAs industrially uses an oxidizing agent, e.g., hydrogen peroxide or bromine water, and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the Ga is complexed with a hydroxamic acid ("HA"), for example:: GaAs + H2O2 + "HA" "GaA" complex + H3AsO4 + 4 H2OOxidation of GaAs occurs in air and degrades performance of the semiconductor, the surface can be passivated by depositing a cubic gallium(II) sulfide layer using a tert-butyl gallium sulfide compound such as (BuGaS)7. GaAs has some electronic properties which are superior to those of silicon. It has a higher saturated electron velocity ...More: http: //booksllc.net/?id=14414


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Product Details
  • ISBN-13: 9781157422440
  • Publisher: Books LLC
  • Publisher Imprint: Books LLC
  • Height: 152 mm
  • Sub Title: Gallium Arsenide, Aluminium Gallium Arsenide, Aluminium Nitride, Indium Gallium Nitride, Gallium Phosphide
  • Width: 229 mm
  • ISBN-10: 1157422446
  • Publisher Date: 15 Sep 2010
  • Binding: Paperback
  • Spine Width: 1 mm
  • Weight: 45 gr


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