Guide to State-of-the-Art Electron Devices: (IEEE Press)

Table of Contents:
Foreword xi Preface xiii Contributors xvii Acknowledgments xix Introduction: Historic Timeline xxi PART I BASIC ELECTRON DEVICES 1 Bipolar Transistors 3 John D. Cressler and Katsuyoshi Washio 1.1 Motivation 3 1.2 The pn Junction and its Electronic Applications 5 1.3 The Bipolar Junction Transistor and its Electronic Applications 10 1.4 Optimization of Bipolar Transistors 15 1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17 References 19 2 MOSFETs 21 Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong 2.1 Introduction 21 2.2 MOSFET Basics 21 2.3 The Evolution of MOSFETs 27 2.4 Closing Remarks 31 References 31 3 Memory Devices 37 Kinam Kim and Dong Jin Jung 3.1 Introduction 37 3.2 Volatile Memories 39 3.3 Non-Volatile Memories 41 3.4 Future Perspectives of MOS Memories 43 3.5 Closing Remarks 45 References 46 4 Passive Components 49 Joachim N. Burghartz and Colin C. McAndrew 4.1 Discrete and Integrated Passive Components 49 4.2 Application in Analog ICs and DRAM 52 4.3 The Planar Spiral Inductor–A Case Study 54 4.4 Parasitics in Integrated Circuits 57 References 57 5 Emerging Devices 59 Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh 5.1 Non-Charge-Based Switching 59 5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63 5.3 Closing Remarks 66 References 67 PART II ASPECTS OF DEVICE AND IC MANUFACTURING 6 Electronic Materials 71 James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu 6.1 Introduction 71 6.2 Silicon Device Technology 71 6.3 Compound Semiconductor Devices 75 6.4 Electronic Displays 79 6.5 Closing Remarks 82 References 83 7 Compact Modeling 85 Colin C. McAndrew and Laurence W. Nagel 7.1 The Role of Compact Models 85 7.2 Bipolar Transistor Compact Modeling 87 7.3 MOS Transistor Compact Modeling 89 7.4 Compact Modeling of Passive Components 92 7.5 Benchmarking and Implementation 94 References 94 8 Technology Computer Aided Design 97 David Esseni, Christoph Jungemann, J¨urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi 8.1 Introduction 97 8.2 Drift-Diffusion Model 98 8.3 Microscopic Transport Models 100 8.4 Quantum Transport Models 101 8.5 Process and Equipment Simulation 102 References 105 9 Reliability of Electron Devices, Interconnects and Circuits 107 Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak 9.1 Introduction and Background 107 9.2 Device Reliability Issues 109 9.3 Circuit-Level Reliability Issues 114 9.4 Microscopic Approaches to Assuring Reliability of ICs 117 References 117 10 Semiconductor Manufacturing 121 Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold 10.1 Introduction 121 10.2 Substrates 122 10.3 Lithography and Etching 122 10.4 Front-End Processing 124 10.5 Back-End Processing 125 10.6 Process Control 128 10.7 Assembly and Test 129 10.8 Future Directions 131 References 131 PART III APPLICATIONS BASED ON ELECTRON DEVICES 11 VLSI Technology and Circuits 135 Kaustav Banerjee and Shuji Ikeda 11.1 Introduction 135 11.2 MOSFET Scaling Trends 136 11.3 Low-Power and High-Speed Logic Design 137 11.4 Scaling Driven Technology Enhancements 139 11.5 Ultra-Low Voltage Transistors 144 11.6 Interconnects 144 11.7 Memory Design 148 11.8 System Integration 150 References 152 12 Mixed-Signal Technologies and Integrated Circuits 157 Bin Zhao and James A. Hutchby 12.1 Introduction 157 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159 12.3 Data Converter ICs 161 12.4 Mixed-Signal Circuits for Low Power Displays 164 12.5 Image Sensor Technologies and Circuits 166 References 168 13 Memory Technologies 171 Stephen Parke, Kristy A. Campbell and Chandra Mouli 13.1 Semiconductor Memory History 171 13.2 State of Mainstream Semiconductor Memory Today 178 13.3 Emerging Memory Technologies 183 13.4 Closing Remarks 185 References 186 14 RF and Microwave Semiconductor Technologies 189 Giovanni Ghione, Fabrizio Bonani, Ruediger Quay and Erich Kasper 14.1 III-V-Based: GaAs and InP 189 14.2 Si and SiGe 194 14.3 Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond) 197 References 199 15 Power Devices and ICs 203 Richard K. Williams, Mohamed N. Darwish, Theodore J. Letavic and Mikael O¨stling 15.1 Overview of Power Devices and ICs 203 15.2 Two-Carrier and High-Power Devices 205 15.3 Power MOSFET Devices 206 15.4 High-Voltage and Power ICs 209 15.5 Wide Bandgap Power Devices 210 References 211 16 Photovoltaic Devices 213 Steven A. Ringel, Timothy J. Anderson, Martin A. Green, Rajendra Singh and Robert J. Walters 16.1 Introduction 213 16.2 Silicon Photovoltaics 215 16.3 Polycrystalline Thin-Film Photovoltaics 218 16.4 III-V Compound Photovoltaics 219 16.5 Future Concepts in Photovoltaics 220 References 222 17 Large Area Electronics 225 Arokia Nathan, Arman Ahnood, Jackson Lai and Xiaojun Guo 17.1 Thin-Film Solar Cells 225 17.2 Large Area Imaging 229 17.3 Flat Panel Displays 233 References 235 18 Microelectromechanical Systems (MEMS) 239 Darrin J. Young and Hanseup Kim 18.1 Introduction 239 18.2 The 1960s – First Micromachined Structures Envisioned 239 18.3 The 1970s – Integrated Sensors Started 240 18.4 The 1980s – Surface Micromachining Emerged 241 18.5 The 1990s – MEMS Impacted Various Fields 244 18.6 The 2000s – Diversified Sophisticated Systems Enabled by MEMS 247 18.7 Future Outlook 248 References 248 19 Vacuum Device Applications 251 David K. Abe, Baruch Levush, Carter M. Armstrong, Thomas Grant and William L. Menninger 19.1 Introduction 251 19.2 Traveling-Wave Devices 252 19.3 Klystrons 255 19.4 Inductive Output Tubes 258 19.5 Crossed-Field Devices 259 19.6 Gyro-Devices 260 References 262 20 Optoelectronic Devices 265 Leda Lunardi, Sudha Mokkapati and Chennupati Jagadish 20.1 Introduction 265 20.2 Light Emission in Semiconductors 266 20.3 Photodetectors 268 20.4 Integrated Optoelectronics 269 20.5 Optical Interconnects 271 20.6 Closing Remarks 271 References 271 21 Devices for the Post CMOS Era 275 Wilfried Haensch 21.1 Introduction 275 21.2 Devices for the 8-nm Node with Conventional Materials 277 21.3 New Channel Materials and Devices 282 21.4 Closing Remarks 287 References 287 Index 291

About the Author :
Edited by Prof. Dr. Joachim N. Burghartz Institute for Microelectronics Stuttgart, Germany