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Home > Science, Technology & Agriculture > Electronics and communications engineering > Electronics engineering > Electronics: circuits and components > Strained Silicon Heterostructures: Materials and devices(Materials, Circuits and Devices)
Strained Silicon Heterostructures: Materials and devices(Materials, Circuits and Devices)

Strained Silicon Heterostructures: Materials and devices(Materials, Circuits and Devices)


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About the Book

In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists.

Table of Contents:
Chapter 1: Introduction Chapter 2: Strained Layer Epitaxy Chapter 3: Electronic Properties of Alloy Layers Chapter 4: Gate Dielectrics on Strained Layers Chapter 5: SiGe Heterojunction Bipolar Transistors Chapter 6: Heterostructure Field Effect Transistors Chapter 7: BICFET, RTD and Other Devices Chapter 8: MODFETs Chapter 9: Contact Metallization on Strained Layers Chapter 10: Si/SiGe Optoelectronics

About the Author :
Dr Maiti received his M Tech degree in Radio Physics and Electronics from the University of Calcutta and MSc from the University of Technology, Loughborough. His PhD was awarded by the Indian Institute of Technology, Kharagpur in 1984 where he remained and currently is a Professor in the Department of Electronics. He currently leads the semiconductor device/process simulation research group. Dr Chakrabarti received his MSc(Tech) degree in Applied Physics and DSc from the University of Calcutta in 1974. He is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics. Dr Ray received his MSc degree from the University of Calcutta and his M Tech and PhD from the Indian Institute of Technology, Kharagpur in 1991. He is now an Associate Professor in the Physics department leading the semiconductor materials processing research group.


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Product Details
  • ISBN-13: 9780852967782
  • Publisher: Institution of Engineering and Technology
  • Publisher Imprint: Institution of Engineering and Technology
  • Height: 234 mm
  • Series Title: Materials, Circuits and Devices
  • Width: 156 mm
  • ISBN-10: 0852967780
  • Publisher Date: 28 Feb 2001
  • Binding: Hardback
  • Language: English
  • Sub Title: Materials and devices


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