Optical Processes in Semiconductors: (Dover Books on Physics)

Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination, processes in pn junctions, semiconductor lasers, interactions involving coherent radiation, photoelectric emission, photovoltaic effects, polarization effects, photochemical effects, effect of traps on luminescence, and reflective modulation.The author has presented the subject in a manner which couples readily to physical intuition. He introduces new techniques and concepts, including nonradiative recombination, effects of doping on optical properties, Franz-Keldysh effect in absorption and emission, reflectance modulation, and many others. Dr. Pankove emphasizes the underlying principle that can be applied to the analysis and design of a wide variety of functional devices and systems. Many valuable references, illustrative problems, and tables are also provided here.

Table of Contents:
1 ENERGY STATES IN SEMICONDUCTORS 1-A Band Structure 1-A-1 Banding of Atomic Levels 1-A-2 Distribution in Momentum Space 1-A-3 Density-of-States Distribution 1-A-4 Carrier Concentration 1-B Inpurity States 1-C Band Tailing 1-D Excitons 1-D-1 Free Excitons 1-D-2 Excitonic Complexes 1-D-3 Polaritons 1-E Donor-Acceptor Pairs 1-F States in Semiconducting Alloys 2 PERTURBATION OF SEMICONDUCTORS BY EXTERNAL PARAMETERS 2-A Pressure Effects 2-A-1 Hydrostatic Pressure 2-A-2 Uniaxial Strain 2-B Temperature Effects 2-C Electric-Field Effects 2-C-1 Stark Effects 2-C-2 Franz-Keldysh Effect 2-C-3 Ionization Effects 2-D Magnetic-Field Effects 2-D-1 Landau Splitting 2-D-2 Zeeman Effect 3 ABSORPTION 3-A Fundamental Absorption 3-A-1 Allowed Direct Transitions 3-A-2 Forbidden Direct Transitions 3-A-3 Indirect Transitions between Indirect Valleys 3-A-4 Indirect Transitions between Direct Valleys 3-A-5 Transitions between Band Tails 3-A-6 Fundamental Absorption in the Presence of a Strong Electric Field 3-B Higher-energy Transitions 3-C Exciton Absorption 3-C-1 Direct and Indirect Excitons 3-C-2 Exciton Absorption in the Presence of an Electric Field 3-D Absorption due to Isoelectronic Traps 3-E Transitions between a Band and an Impurity Level 3-F Acceptor-to-Donor Transitions 3-G Intraband Transitions 3-G-1 p-Type Semiconductors 3-G-2 n-Type Semiconductors 3-H Free-carrier Absorption 3-I Lattice Absorption 3-J Vibrational Absorption of Impurities 3-K Hot-Electron-Assisted Absorption 4 RELATIONSHIPS BETWEEN OPTICAL CONSTANTS 4-A Absorption Coefficient 4-B Index of Reflection 4-C The Kramers-Kronig Relations 4-D Reflection Coefficient 4-E Determination of Carrier Effective Mass 4-F Plasma Resonance 4-G Transmission 4-H Interference Effects 5 ABSORPTION SPECTROSCOPY 6 RADIATIVE TRANSITIONS 6-A The Van Roosbroeck-Shockley Relation 6-B Radiative Efficiency 6-C The Configuration Diagram 6-D Fundamental Transitions 6-D-1 Exciton Recombination 6-D-2 Conduction-Band-to-Valence-Band Transitions 6-E Transition between a Band and an Impurity Level 6-E-1 Shallow Transitions 6-E-2 Deep Transitions 6-E-3 Transitions to Deep Levels 6-F Donor-Acceptor Transitions 6-F-1 Spectral Structure 6-F-2 Transition Probability 6-F-3 Time Dependence of Donor-to-Acceptor Transitions 6-G Intraband Transition 7 NONRADIATIVE RECOMBINATION 7-A Auger Effect 7-B Surface Recombination 7-C Recombination through Defects or Inclusions 7-D Configuration Diagram 7-E Mulitple-Phonon Emission 8 PROCESSES IN p-n JUNCTIONS 8-A Nature of the p-n Junction 8-A-1 The Depletion Layer 8-A-2 Junction Capacitance 8-A-3 Electric Field in the p-n Junction 8-B Forward-bias Processes 8-B-1 Band-to-Band Tunneling 8-B-2 Photon-Assisted Tunneling 8-B-3 Injection 8-B-4 Tunneling to Deep Levels 8-B-5 Donor-to-Acceptor Photon-Assisted Tunneling 8-B-6 Band Filling 8-B-7 Injection Luminescence in Lightly Doped Junctions 8-B-8 Optical Refrigeration 8-C Heterojunctions 8-D Reverse-Bias Processes 8-D-1 Saturation Current and Photoconductivity 8-D-2 Zener Breakdown 8-D-3 Avalanche Breakdown 9 STIMULATED EMISSION 9-A Relationship between Spontaneous and Stimulated Emission 9-B Criteria for Lasing in a Semiconductor 10 SEMICONDUCTOR LASERS 10-A Cavity and Modes 10-B Waveguiding Properties of the Active Region 10-C Far-Field Pattern 10-D Temperature Dependence 10-D-1 Effect of the Cavity 10-D-2 "Temperature Dependence of Losses, of Efficiency and of Threshold Current Density" 10-D-3 Power Dissipation 10-E Optimum Design for Injection Laser 10-F Influence of a Magnetic Field 10-G Pressure Effects 11 EXCITATION OF LUMINESCENCE AND LASING IN SEMICONDUCTORS 11-A Electroluminescence 11-A-1 Forward Biased p-n Junction 11-A-2 Forward-Biased Surface Barrier 11-A-3 Tunneling through an Insulating Layer 11-A-4 Bulk Excitation by Impact Ionization 11-B Optical Excitation 11-C Electron-Beam Excitation 12 PROCESSES INVOLVING COHERENT RADIATION 12-A Photon-Photon Interactions in Semiconductors 12-A-1 Quenching of a Laser by Another Laser 12-A-2 Amplification 12-A-3 Harmonic Generation 12-A-4 Two-photon Absorption 12-A-5 Frequency Mixing 12-B Photon-Phonon Interactions in Semiconductors 12-B-1 Raman Scattering 12-B-2 Brillouin Scattering 12-C Optical Properties of Acoustoelectric Domains 12-C-1 The Acoustoelectric Effect 12-C-2 Light Transmission of Acoustoelectric Domain 12-C-3 Light Emission by Acoustoelectric Domain 12-C-4 Brillouin Scattering Studies of Acoustoelectric Domains 13 PHOTOELECTRIC EMISSION 13-A Threshold for Emission 13-B Photoelectric Yield 13-C Effect of Surface Conditions 13-D Energy Distribution of Emitted Electrons 14 PHOTOVOLATAIC EFFECTS 14-A Photovoltaic Effect at p-n Junctions 14-A-1 Electrical Characteristics 14-A-2 Spectral Characteristics 14-A-3 The Solar Cell 14-B Photovoltaic Effects at Schottky Barriers 14-B-1 The Schottky Barrier 14-B-2 Photo-Effects 14-B-3 Particle Detectors 14-C Bulk Photovoltaic Effects 14-C-1 Dember Effects 14-C-2 Photomagnetoelectric Effect 14-D Anomalous Photovoltaic Effect 14-D-1 Characteristics of Anomalous Photovoltaic Cells 14-D-2 Conditions for Obtaining the Anomalous Photovoltaic Effect 14-D-3 Models for the Anomalaous Photovoltaic Effect 14-D-4 Angular Dependence of Photovoltaic Effects 14-E Other Photovoltaic Effects 14-E-1 Lateral Photoeffect 14-E-2 Optically Induced Barriers 14-E-3 Photovoltaic Effect at a Graded Energy Gap 15 POLARIZATION EFFECTS 15-A Birefringence 15-A-1 Birefringence in Uniaxial Crystals 15-A-2 Elliptical Polarization 15-A-3 Birefringence in Biaxial Crystals 15-B Induced Optical Anisotropy 15-B-1 Electro-Optic Kerr Effect 15-B-2 Pockets Effect or Linear Electro-Optic Effect 15-B-3 Faraday Effect   17-E-4 Temperature Dependence of Trapping in GaAs Injection Lasers 17-E-5 Double-Acceptor Model 17-E-6 Internal Q-Switching 17-F Triboluminescence 17-F-1 Strain-Excited Luminescence 17-F-2 Strain-Stimulated Luminescence 17-F-3 Fracture Luminescence 18 REFLECTANCE MODULATION 18-A Dependence of Reflectance on the Band Structure 18-B Reflectance-modulation Techniques 18-B-1 Electroreflectance 18-B-2 Optical Modulation of Reflectance 18-B-3 Cathodoreflectance Modulation 18-B-4 Piezoreflectance Modulation 18-B-5 Thermoreflectance Modulation 18-B-6 Wavelength Modulation 18-C Some Results APPENDICES I Table of Contents II Properties of Semiconductors III Nomograph of the Temperature Dependence of the Fermi Level in a Degenerate Parabolic Band IV Physical Constants INDEX