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Ultrafast All–Optical Signal Processing Devices

Ultrafast All–Optical Signal Processing Devices


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About the Book

A thorough and in-depth treatment of the state-of-the-art development of semiconductor based ultrafast all-optical devices; this book provides practical examples to clearly explain the technologies. It also explains technical issues in turning the ultrafast optical devices into practical working tools. The book covers the following: * Mode-locked semiconductor lasers. * Electro-absorption modulator based 160Gb/s signal sources. * Signal processing using only the ultrafast response component of the semiconductor optical amplifier (SOA). * SOA based symmetric Mach-Zehnder type all-optical gates. * Uni-travelling-carrier photodiode (UTC-PD) and PD-EAM optical gate integrating UTC-PD and travelling wave electro-absorption modulator (TW-EAM). * Intersubband transition all-optical gates with a few 100fs to 1 ps response speed. * Transparent wavelength conversion using four-wave mixing in bulk and quantum dot based SOA. * Examples of above 160Gb/s transmission experiments.

Table of Contents:
CHAPTER 1. Introduction 1.1 Evolution of optical communication systems and device technologies 1.2 Increasing communication traffics and power consumption 1.3 Future networks and technologies 1.4 Ultrafast all-optical signal processing devices 1.5 Overview of the devices and their concepts 1.6 Summary CHAPTER 2. Light Sources 2.1 Requirement for light sources 2.2 Mode-locked laser diodes 2.3 Electro-absorption modulator (EAM) based signal source 2.4 Summary CHAPTER 3 Semiconductor optical amplifier based ultrafast signal processing devices 3.1 Introduction 3.2 Fundamental of SOA 3.3 SOA as an ultrafast nonlinear medium 3.4 Use of ultrafast response component by filtering 3.5 Symmetric Mach-Zehnder (SMZ) all-optical gate 3.6 Summary CHAPTER 4 Uni-traveling-carrier photodiode (UTC-PD) and PD-EAM optical gate integrating a UTC-PD and a traveling wave electro-absorption modulator 4.1 Introduction 4.2 Uni-traveling-carrier photodiode (UTC-PD) 4.3 Concept of new opto-electronic integrated device 4.4 PD-EAM optical gate integrating UTC-PD and TW-EAM 4.5 Summary and prospects CHAPTER 5 Intersubband transition all-optical gates 5.1 Operation principle 5.2 GaN/AlN ISBT gate 5.3 (CdS/ZnSe)/BeTe ISBT gate 5.4 InGaAs/AlAs/AlAsSb ISBT gate 5.5 Cross-phase modulation effect in InGaAs/AlAs/AlAsSb ISBT gate 5.6 Summary CHAPTER 6 Wavelength conversion devices 6.1 Introduction 6.2 Wavelength conversion schemes 6.3 Physics of four-wave mixing in LDs and SOAs 6.4 Wavelength conversion of short pulses using FWM in semiconductor devices 6.5 Experimental results of wavelength conversion using FWM in SOAs and LDs 6.6 The future view of wavelength conversion using FWM 6.7 Summary CHAPTER 7 Summary and future prospects 7.1 Introduction 7.2 Transmission experiments 7.3 Requirements on devices and prospects 7.4 Summary and future prospects

About the Author :
Dr Hiroshi Ishikawa, Tsukuba, Japan Dr Ishikawa is the Director of the Ultrafast Photonic Devices Laboratory in National Institute of Advanced Industrial Science and Technology (AIST) in Japan. He worked for research and development of optical semiconductor devices in Fujitsu Labs Ltd from 1972 to 2001. In 2001 he moved to Femtosecond Technology Research Association Central Res. Lab. as a group leader of ultrafast all-optical switching devices. He is at AIST since 2004. He is a member of Japan Society of Applied Physics, The Physical Society of Japan, The Institute of Electronics, Information and Communication Engineers, and IEEE (Fellow).


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Product Details
  • ISBN-13: 9780470758694
  • Publisher: John Wiley and Sons Ltd
  • Publisher Imprint: Wiley-Blackwell
  • Height: 255 mm
  • No of Pages: 258
  • Weight: 610 gr
  • ISBN-10: 0470758694
  • Publisher Date: 22 Aug 2008
  • Binding: Other digital
  • Language: English
  • Spine Width: 20 mm
  • Width: 176 mm


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