Semiconductor Materials Analysis and Fabrication Process Control: Proceedings of Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control, 1992 E-MRS Spring Conferen(v. 34 European Materials Research Aociety Symposia Proceedings S.)

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterization and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques, such as photoreflectance and spectroellipsometry; and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume should serve as a useful and timely overview of this increasingly important field.

Table of Contents:
Part 1 Spectroscopic ellipsometry: in situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices, G.N. Maracas et al; the influence of nanocrystals on the dielectric function of porous silicon, H. Muender et al. Part 2 Secondary ion mass spectroscopy: some examples of depth resolution in SIMS analysis, G. Pruden; sputter induced resonant ionization spectroscopy for trace analysis in silicon, L. Johann et al. Part 3 Contamination monitoring: contamination control and ultrasensitive chemical analysis, H. Ryssel et al; application of advanced contamination analysis for qualification of wafer handling systems and chucks, F. Kroninger et al. Part 4 Epioptic characterization techniques: in situ optical spectroscopy of surfaces and interfaces with submonolayer resolution, J.F. McGilp; surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD - the example of UV photodeposition of silicon dioxide and silicon nitride, C. Licoppe and C. Debauche. Part 5 Characterization of the mechanical state of Sl material system: on the assessment of local stress distributions in integrated circuits, J. Vannellemont et al; strain analysis of multilayered silicon-based contact structures, E. Zolotoyabko et al. Part 6 Joint session on single chamber processing: in-process control of silicide formation during rapid thermal processing, J.-M. Dilhac et al; in situ ellipsometry for real time feedback control of oxidation furnaces, C. Sennerder et al. Part 7 Photoreflectance of III-V materials: optical characterization of the electrical properties of processed GaAs, O.J. Glembocki et al; temperature dependence of the potoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells, Y. Baltagi et al. Part 8 Photoluminescence of photonic material systems: optical tools for intermixing diagnostic - application to InGaAs/InGaAsP microstructures, H. Peyre et al; temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures, C. Arena et al. Part 9 Characterization of electronic properties: lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC, A. Castaldini et al; in situ quality monitoring during the deposition of a-Si:H films. Part 10 FTIR and PL of silicon material systems: non-destructive identification of end of range damage in ion implanted and annealed silicon, U. Shreter et al; optical characterization of semiconductors containing inhomogeneous layers, G.E. Aizenberg et al. Part 11 Posters: nonlinear recombinations in photoreflectance characterization of silicon wafers, B.C. Forget et al; electrochemical etching and profiling of silicon, T.S. Horanvi and P. Tuetto.