New Functionality Materials: v. A

In order to further extend progress in the field of optoelectronics, it is of great importance to stimulate the development of novel and sophisticated technologies for material design, control and preparation in not only the typical semiconductors, but also in other semiconductors which have varying characteristics of optoelectronic properties. A comprehensive selection of 43 articles describing the results of work carried out by the members of a project research program is presented in this volume. The objective of this research program was to promote the creation of novel functional materials at atomic or molecular level, on the nature of functionality materials, i.e., metals, semiconductors, ceramics, organic polymers, and their composites or hybridized materials. The aim of this book is to provide a global overview on the scientific and technological information which has been produced by this research project on the design, control and preparation of semiconductor materials for novel optoelectronic devices. The multidisciplinary composition of the chapters will stimulate the cross-fertilization of ideas among workers from different backgrounds in approaching their goals. This volume, together with the companion volumes B and C, which focus on "Synthesis and Function Control of Biofunctionality Materials" and "Synthetic Process and Control of Functionality Materials" respectively will serve as a valuable asset to scientists in academic, governmental and industrial institutions, providing insights into newly developing research areas in functionality materials.

Table of Contents:
Part 1 Atomic-scale control of crystal growth: characterization of II-IV epitaxial layers on III-V substrates and of the heterointerfaces - ZnSe/GaAs, T. Matsumoto; alkyl-based group V OMVPE with atomic level controllability, A. Wakahara et al; measurement of local structures around impurity atoms and of one monolayer in semiconductors by fluorescence-detected EXAFS, Y. Takeda et al; hetero-epitaxial growth of chalcopyrite-type compound semiconductors for blue emitting devices, K. Masumoto et al. Part 2 Control of localized electronic states: optical characterization of spontaneously ordered GaInP alloy semiconductors, T. Nishino; electrical and optical properties of ZnS grown from Sb-compound solutions, H. Kanie et al. Part 3 Creation of new materials with novel optical functions: optical and electronic nonlinearities in organic semiconductors, T. Koda et al; optical and ESR characterization of transition atoms in wide gap chalcopyrite type semiconductors, K. Sato and I.A. Aksenov; lattice instability and photoconduction of monoclinic TIS, S. Katayama and S. Kashida; optical properties of PbI[2] mezoscopic particles in matrix, T. Goto et al. Part 4 Quantum structures and new properties: growth and characterization of Zn-Se-based II-VI semiconductor quantum wells and superlattices for short wavelength semiconductor lasers, S. Fujita et al; new mechanisms of band offsets at various semiconductor interfaces, T. Nakayama; 3-D quantum confinement of optical excited carriers in semiconductor microcrystallites, T. Tokizaki and A. Nakamura; molecular-beam-epitaxial growth of superlattices of II-VI compounds and studies of their crystallographic and optical properties, S. Shionoya et al. Part 5 Control of material properties for novel optical devices: growth and conductivity-control of ZnSe-based widegap II-VI compounds by MOVPE, MBE and MOMBE, A. Yoshikawa; GaInAs/InP quantum-wire lasers fabricated by EBX ultra-fine lithography and 2-step OMVPE growths, S. Arai; laser spectroscopy of II-VI compound semiconductors, Y. Masumoto; investigation of the codopant effect on increasing the efficiency of blue rare earth eletroluminescence, S. Ibuki et al.